QPD2795

Mfr. #:: QPD2795
製造商:: Qorvo
描述:: RF JFET Transistors QPD2795 360W 2.5-2.7GHz GaN Transisto
生命週期:: 製造商新產品
數據表:: QPD2795 數據表
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更多信息:: QPD2795 更多信息

產品屬性
屬性值

Tags: QPD279, QPD27, QPD2, QPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

QPD2795 描述

***W: RF Transistor, Power, 2.5 - 2.7 GHz, 55.6 dBm, 22 dB, GaN, NI-780 Ceramic

QPD2795 更多信息

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

型號	製造商	描述	庫存	價格
QPD2795 DISTI # 772-QPD2795	Qorvo	RF JFET Transistors 2.5-2.7GHz 360W 48V Gain 22dB GaN RoHS: Compliant	10	1:$198.7400 25:$164.5800

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