SI3460DV-T1-GE3

SI3460DV-T1-GE3
Mfr. #:
SI3460DV-T1-GE3
製造商:
Vishay
描述:
RF Bipolar Transistors MOSFET 20V 6.8A 2.0W 38mohm @ 1.8V
生命週期:
製造商新產品
數據表:
SI3460DV-T1-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商
威世
產品分類
FET - 單
打包
捲軸
部分別名
SI3460DV-GE3
單位重量
0.000705 oz
安裝方式
貼片/貼片
包裝盒
TSOP-6
技術
通道數
1 Channel
配置
單身的
晶體管型
1 N-Channel
鈀功耗
1.1 W
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
VGS-柵極-源極-電壓
8 V
Id 連續漏極電流
6.8 A
Vds-漏-源-擊穿電壓
20 V
Rds-On-Drain-Source-Resistance
27 mOhms
晶體管極性
N通道
Tags
SI3460DV-T1, SI3460DV-T, SI3460DV, SI3460D, SI3460, SI346, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型號 製造商 描述 庫存 價格
SI3460DV-T1-GE3
DISTI # SI3460DV-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 20V 5.1A 6TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SI3460DV-T1-GE3
    DISTI # 781-SI3460DV-GE3
    Vishay IntertechnologiesMOSFET 20V 6.8A 2.0W 38mohm @ 1.8V
    RoHS: Compliant
    0
      SI3460DV-T1-GE3Vishay Intertechnologies 3000
        圖片 型號 描述
        SI3460DDV-T1-GE3

        Mfr.#: SI3460DDV-T1-GE3

        OMO.#: OMO-SI3460DDV-T1-GE3

        MOSFET 20V Vds 8V Vgs TSOP-6
        SI3460DV-T1-E3

        Mfr.#: SI3460DV-T1-E3

        OMO.#: OMO-SI3460DV-T1-E3

        MOSFET RECOMMENDED ALT 781-SI3460DDV-T1-GE3
        SI3460DV-T1-GE3

        Mfr.#: SI3460DV-T1-GE3

        OMO.#: OMO-SI3460DV-T1-GE3-VISHAY

        RF Bipolar Transistors MOSFET 20V 6.8A 2.0W 38mohm @ 1.8V
        SI3460DDV

        Mfr.#: SI3460DDV

        OMO.#: OMO-SI3460DDV-1190

        全新原裝
        SI3460DDV-T1-E3

        Mfr.#: SI3460DDV-T1-E3

        OMO.#: OMO-SI3460DDV-T1-E3-1190

        全新原裝
        SI3460DDV-T1-GE3

        Mfr.#: SI3460DDV-T1-GE3

        OMO.#: OMO-SI3460DDV-T1-GE3-VISHAY

        MOSFET N-CH 20V 7.9A 6-TSOP
        SI3460DV-T1

        Mfr.#: SI3460DV-T1

        OMO.#: OMO-SI3460DV-T1-1190

        MOSFET RECOMMENDED ALT 781-SI3460BDV-E3
        SI3460DV-T1-E3 (DC200801

        Mfr.#: SI3460DV-T1-E3 (DC200801

        OMO.#: OMO-SI3460DV-T1-E3-DC200801-1190

        全新原裝
        SI3460DV-TI

        Mfr.#: SI3460DV-TI

        OMO.#: OMO-SI3460DV-TI-1190

        全新原裝
        SI3460DVT1E3

        Mfr.#: SI3460DVT1E3

        OMO.#: OMO-SI3460DVT1E3-1190

        Small Signal Field-Effect Transistor, 5.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        可用性
        庫存:
        Available
        訂購:
        3500
        輸入數量:
        SI3460DV-T1-GE3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
        參考價格(美元)
        數量
        單價
        小計金額
        1
        US$0.00
        US$0.00
        10
        US$0.00
        US$0.00
        100
        US$0.00
        US$0.00
        500
        US$0.00
        US$0.00
        1000
        US$0.00
        US$0.00
        從...開始
        Top