IGP20N65F5XKSA1

Mfr. #:: IGP20N65F5XKSA1
製造商:: Infineon Technologies
描述:: IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a
生命週期:: 製造商新產品
數據表:: IGP20N65F5XKSA1 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: IGBT晶體管

技術：: 矽

包裝/案例：: TO-220-3

系列：: TRENCHSTOP 5 F5

打包：: 管子

品牌：: 英飛凌科技

產品類別：: IGBT晶體管

子類別：: IGBT

商品名：: 戰壕

第 # 部分別名：: IGP20N65F5 SP001132998

Tags: IGP20N65, IGP20, IGP2, IGP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IGP20N65F5XKSA1 描述

***ical: Trans IGBT Chip N-CH 650V 42A 125000mW 3-Pin(3+Tab) TO-220 Tube

***p One Stop Japan: 650V IGBT High Speed Switching Series

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

Market price

型號	製造商	描述	庫存	價格
IGP20N65F5XKSA1 DISTI # V99:2348_06378845	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 42A 125000mW 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	483	100:$1.7439 25:$1.8649 10:$2.0579 1:$2.5403
IGP20N65F5XKSA1 DISTI # IGP20N65F5XKSA1-ND	Infineon Technologies AG	IGBT TRENCH 650V 42A TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube	Temporarily Out of Stock	500:$1.3370
IGP20N65F5XKSA1 DISTI # 26197507	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 42A 125000mW 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	483	7:$2.5403
IGP20N65F5XKSA1 DISTI # IGP20N65F5XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 20A 3-Pin TO-220 Tube - Rail/Tube (Alt: IGP20N65F5XKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	5000:$0.9239 3000:$0.9409 2000:$0.9739 1000:$1.0099 500:$1.0479
IGP20N65F5XKSA1 DISTI # IGP20N65F5XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 20A 3-Pin TO-220 Tube - Bulk (Alt: IGP20N65F5XKSA1) RoHS: Compliant Min Qty: 397 Container: Bulk	Americas - 0	3970:$0.7999 1985:$0.8149 1191:$0.8429 794:$0.8749 397:$0.9069
IGP20N65F5XKSA1 DISTI # SP001132998	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 20A 3-Pin TO-220 Tube (Alt: SP001132998) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€0.8519 500:€0.8629 100:€0.8709 50:€0.8859 25:€0.9139 10:€0.9859 1:€1.2679
IGP20N65F5 DISTI # 726-IGP20N65F5	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS TrenchStop 5 RoHS: Compliant	75	1:$1.9500 10:$1.6600 100:$1.3300 500:$1.1600
IGP20N65F5XKSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 42A I(C), 650V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant	490	1000:$0.8300 500:$0.8700 100:$0.9100 25:$0.9500 1:$1.0200
IGP20N65F5XKSA1 DISTI # IGP20N65F5	Infineon Technologies AG	650V 42A 125W TO220 RoHS: Compliant	500	1:€1.5400 10:€1.1400 50:€0.9400 100:€0.8600

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