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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| SI5513DC-T1-E3 DISTI # SI5513DC-T1-E3TR-ND | Vishay Siliconix | MOSFET N/P-CH 20V 3.1A 1206-8 Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI5513DC-T1-E3 DISTI # SI5513DC-T1-E3CT-ND | Vishay Siliconix | MOSFET N/P-CH 20V 3.1A 1206-8 Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SI5513DC-T1-E3 DISTI # SI5513DC-T1-E3DKR-ND | Vishay Siliconix | MOSFET N/P-CH 20V 3.1A 1206-8 Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SI5513DC-T1-E3 DISTI # 70026247 | Vishay Siliconix | MOSFET,20V N & P CH (D-S) Complementary RoHS: Not Compliant | 0 |
|
| SI5513DC-T1-E3 DISTI # 1470128 | Vishay Intertechnologies | MOSFET, DUAL, NP, 8-1206 RoHS: Compliant | 0 |
|
| SI5513DC-T1-E3 DISTI # 1470128 | Vishay Intertechnologies | MOSFET, DUAL, NP, 8-1206 RoHS: Compliant | 0 |
|
| SI5513DCT1E3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 16060 |
| 圖片 | 型號 | 描述 |
|---|---|---|
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Mfr.#: SI5513CDC-T1-GE3 OMO.#: OMO-SI5513CDC-T1-GE3 |
MOSFET 20V Vds 12V Vgs 1206-8 ChipFET |
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Mfr.#: SI5513DC-T1-GE3 OMO.#: OMO-SI5513DC-T1-GE3 |
MOSFET |
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Mfr.#: SI5513DC-T1-E3 OMO.#: OMO-SI5513DC-T1-E3 |
MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3 |
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Mfr.#: SI5513CDC OMO.#: OMO-SI5513CDC-1190 |
全新原裝 |
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Mfr.#: SI5513CDC-T1-E3 OMO.#: OMO-SI5513CDC-T1-E3-VISHAY |
MOSFET N/P-CH 20V 4A 1206-8 |
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Mfr.#: SI5513CDC-TI OMO.#: OMO-SI5513CDC-TI-1190 |
全新原裝 |
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Mfr.#: SI5513DC OMO.#: OMO-SI5513DC-1190 |
全新原裝 |
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Mfr.#: SI5513DC-T1 OMO.#: OMO-SI5513DC-T1-1190 |
MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3 |
|
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Mfr.#: SI5513DC-T1-E3 OMO.#: OMO-SI5513DC-T1-E3-VISHAY |
MOSFET N/P-CH 20V 3.1A 1206-8 |
|
|
Mfr.#: SI5513DCT1E3 OMO.#: OMO-SI5513DCT1E3-1190 |
Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET |