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IXYH30N120C3D1

IXYH30N120C3D1
Mfr. #:
IXYH30N120C3D1
製造商:
Littelfuse
描述:
IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT
生命週期:
製造商新產品
數據表:
IXYH30N120C3D1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXYH30N120C3D1 DatasheetIXYH30N120C3D1 Datasheet (P4-P6)IXYH30N120C3D1 Datasheet (P7)
ECAD Model:
更多信息:
IXYH30N120C3D1 更多信息
產品屬性
屬性值
製造商：
IXYS
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-247AD-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
1200 V
集電極-發射極飽和電壓：
3.7 V
最大柵極發射極電壓：
30 V
25 C 時的連續集電極電流：
66 A
Pd - 功耗：
416 W
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
系列：
IXYH30N120
打包：
管子
連續集電極電流 Ic 最大值：
66 A
品牌：
IXYS
柵極-發射極漏電流：
100 nA
產品類別：
IGBT晶體管
出廠包裝數量：
30
子類別：
IGBT
商品名：
XPT
單位重量：
1.340411 oz
Tags
IXYH30N120C, IXYH30N12, IXYH30N1, IXYH3, IXYH, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
GenX3™ XPT™ IGBT 1200 V 66 A Flange Mount High-Speed IGBT - TO-247AD
*** Stop Electro
Insulated Gate Bipolar Transistor, 66A I(C), 1200V V(BR)CES, N-Channel, TO-247AD
***el Electronic
IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ure Electronics
GenX3™ XPT™ IGBT 1200 V 64 A Flange Mount High-Speed IGBT - TO-247AD
***el Electronic
IGBT Transistors XPT 1200V IGBT GenX5 XPT IGBT
***i-Key
IGBT 1200V 64A 480W TO247
***trelec
IGBT, 1.2kV, 80A, TO-247AD
***S
new, original packaged
***el Nordic
Contact for details
***ark
1200V Trench IGBT for Generic Industrial Applications, Size 4.2 w/ Diode (Extended Lead), TUBE
***ical
Trans IGBT Chip N-CH 1200V 85A 320000mW 3-Pin(3+Tab) TO-247AD Tube
***-Wing Technology
Tube Through Hole Trench ROHS3Compliant IGBT Transistor 2V @ 15V 30A 85A 320W 153ns
***ineon SCT
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247 package, TO247COPAK-3, RoHS
***ure Electronics
IRG7PH42UD-EP Series 1200 V 85 A Insulated Gate Bipolar Transistor - TO-247AD
***el Electronic
Alarms, Buzzers, and Sirens Transducer, Externally Driven Through Hole 1 (Unlimited) Piezo PC Pins Zero-Peak Signal 0.496Dia 12.60mm 4kHz 0.291 7.40mm AUDIO PIEZO TRANSDUCER 30V TH
***ineon SCT
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247 package, TO247COPAK-3, RoHS
***ure Electronics
IRG7PH42UDPBF Series 1200 V 85 A Insulated Gate Bipolar Transistor - TO-247AC
***(Formerly Allied Electronics)
1200V Trench IGBT For Generic Industrial Applications, Size 4.2 w/Diode
***ment14 APAC
IGBT,N CH,DIODE,1200V,85A,TO-247AC; Transistor Type:IGBT; DC Collector Current:85A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:320W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:320W
***i-Key
IGBT 1200V 75A 380W TO247
***ark
Igbt, Single, 1.2Kv, 75A, To-247; Dc Collector Current:75A; Collector Emitter Saturation Voltage Vce(On):2.9V; Power Dissipation Pd:380W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ark
Transistor, Igbt, 1.2Kv, 75A, To-247 Rohs Compliant: Yes
***i-Key
IGBT 1200V 75A 380W TO247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***S
new, original packaged
***el Nordic
Contact for details
***p One Stop Global
Trans IGBT Chip N-CH 1200V 60A 300000mW 3-Pin(3+Tab) TO-247AD Tube
***ure Electronics
IRGP30B120KD-EP Series 1200 V 30 A N-Channel Motor Control Co-Pack IGBT TO-247AD
***nell
IGBT, W/DIODE, 1200V, 60A, TO247AD; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.2kV; Power Dissipation Pd: 300W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AD; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: IRGP Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 60A; Fall Time Max: 75ns; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 300W; Pulsed Current Icm: 120A; Rise Time: 25ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 1.2kV
1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
型號 製造商 描述 庫存 價格
IXYH30N120C3D1
DISTI # IXYH30N120C3D1-ND		IXYS CorporationIGBT 1200V 66A 416W TO247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$9.5357
IXYH30N120C3D1
DISTI # 747-IXYH30N120C3D1		IXYS CorporationIGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT
RoHS: Compliant		53
  • 1:$11.6300
  • 10:$10.4700
  • 25:$9.5400
  • 50:$8.7100
  • 100:$8.6100
  • 250:$7.8400
  • 500:$7.2100
  • 1000:$6.2800
IXYH30N120C3D1
DISTI # 8080271P		IXYS CorporationIGBT 1200V 30A XPT GENX3 W/DIODE TO247AD, TU9
  • 10:£7.1500
  • 20:£6.9800
  • 50:£6.8100
  • 250:£5.6600
圖片 型號 描述
MGJ2D051509SC

Mfr.#: MGJ2D051509SC

OMO.#: OMO-MGJ2D051509SC-MURATA-POWER-SOLUTIONS

 Isolated DC/DC Converters 2W 5Vin 15/-8.7Vout 80/40mA SIP
可用性
庫存:
33
訂購:
2016
輸入數量:
IXYH30N120C3D1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$11.63
US$11.63
10
US$10.47
US$104.70
25
US$9.54
US$238.50
50
US$8.71
US$435.50
100
US$8.61
US$861.00
250
US$7.84
US$1 960.00
500
US$7.21
US$3 605.00
1000
US$6.28
US$6 280.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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