SI3459BDV-T1-GE3

SI3459BDV-T1-GE3
Mfr. #:
SI3459BDV-T1-GE3
製造商:
Vishay
描述:
MOSFET P-CH 60V 2.9A 6-TSOP
生命週期:
製造商新產品
數據表:
SI3459BDV-T1-GE3 數據表
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ECAD Model:
更多信息:
SI3459BDV-T1-GE3 更多信息
產品屬性
屬性值
Tags
SI3459BDV-T, SI3459BDV, SI3459B, SI3459, SI345, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET; P-Ch; Vds -60V; Vgs +/- 20V; Rds(on) 0.180ohms; Id -2.2A; TSOP-6; Pd 2W
***ure Electronics
P-CH MOSFET TSOP-6 60V 180MOHM @ 10V - LEAD(PB) AND HALOGEN FREE
***ical
Trans MOSFET P-CH 60V 2.9A 6-Pin TSOP T/R
***ark
P-Channel 60-V (D-S) Mosfet Rohs Compliant: No
***i-Key
MOSFET P-CH 60V 2.9A 6-TSOP
***Components
MOSFET, P-Ch, Vds -60V, Vgs +/- 20V
***
P-CHANNEL 60-V (D-S) MOSFET
***ment14 APAC
Prices include import duty and tax. MOSFET, P-CH, -60V, -2.9A, TSOP; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.9A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:3.3W; Transistor Case Style:TSOP; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2016)
***nell
MOSFET, CANALE P, -60V, -2,9A, TSOP; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-2.9A; Tensione Drain Source Vds:-60V; Resistenza di Attivazione Rds(on):0.18ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-3V; Dissipazione di Potenza Pd:3.3W; Modello Case Transistor:TSOP; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (20-Jun-2016)
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
型號 製造商 描述 庫存 價格
SI3459BDV-T1-GE3
DISTI # V72:2272_07432605
Vishay IntertechnologiesTrans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R
RoHS: Compliant
55
  • 25:$0.5427
  • 10:$0.6633
  • 1:$0.7621
SI3459BDV-T1-GE3
DISTI # V36:1790_07432605
Vishay IntertechnologiesTrans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R
RoHS: Compliant
0
  • 3000:$0.2863
SI3459BDV-T1-GE3
DISTI # SI3459BDV-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 60V 2.9A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
35445In Stock
  • 1000:$0.2980
  • 500:$0.3725
  • 100:$0.4712
  • 10:$0.6150
  • 1:$0.7000
SI3459BDV-T1-GE3
DISTI # SI3459BDV-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 60V 2.9A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
35445In Stock
  • 1000:$0.2980
  • 500:$0.3725
  • 100:$0.4712
  • 10:$0.6150
  • 1:$0.7000
SI3459BDV-T1-GE3
DISTI # SI3459BDV-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 60V 2.9A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
33000In Stock
  • 30000:$0.2290
  • 15000:$0.2351
  • 6000:$0.2441
  • 3000:$0.2622
SI3459BDV-T1-GE3
DISTI # 33591883
Vishay IntertechnologiesTrans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R
RoHS: Compliant
3000
  • 3000:$0.1688
SI3459BDV-T1-GE3
DISTI # 26942294
Vishay IntertechnologiesTrans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R
RoHS: Compliant
55
  • 24:$0.7621
SI3459BDV-T1-GE3
DISTI # SI3459BDV-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R (Alt: SI3459BDV-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 12000
  • 150000:$0.1473
  • 75000:$0.1512
  • 30000:$0.1554
  • 15000:$0.1668
  • 9000:$0.1922
  • 6000:$0.2315
  • 3000:$0.2835
SI3459BDV-T1-GE3
DISTI # SI3459BDV-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R (Alt: SI3459BDV-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.1549
  • 18000:€0.1659
  • 12000:€0.1799
  • 6000:€0.2089
  • 3000:€0.3069
SI3459BDV-T1-GE3
DISTI # SI3459BDV-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3459BDV-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.2689
  • 18000:$0.2759
  • 12000:$0.2839
  • 6000:$0.2959
  • 3000:$0.3049
SI3459BDV-T1-GE3
DISTI # 15R4948
Vishay IntertechnologiesP CHANNEL MOSFET, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.2A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,No. of Pins:6Pins RoHS Compliant: Yes0
  • 50000:$0.2710
  • 30000:$0.2840
  • 20000:$0.3050
  • 10000:$0.3260
  • 5000:$0.3530
  • 1:$0.3620
SI3459BDV-T1-GE3
DISTI # 84R8040
Vishay IntertechnologiesP CH MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.2A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,Power Dissipation Pd:2W RoHS Compliant: Yes0
  • 1000:$0.3390
  • 500:$0.4240
  • 250:$0.4690
  • 100:$0.5140
  • 50:$0.5950
  • 25:$0.6770
  • 1:$0.8380
SI3459BDV-T1-GE3.
DISTI # 96AC3676
Vishay IntertechnologiesP-CHANNEL 60-V (D-S) MOSFET ROHS COMPLIANT: NO3000
  • 50000:$0.2710
  • 30000:$0.2840
  • 20000:$0.3050
  • 10000:$0.3260
  • 5000:$0.3530
  • 1:$0.3620
SI3459BDV-T1-GE3
DISTI # 70026448
Vishay SiliconixMOSFET,P-Ch,Vds -60V,Vgs +/- 20V,Rds(on) 0.180ohms,Id -2.2A,TSOP-6,Pd 2W
RoHS: Compliant
0
  • 3000:$0.3370
SI3459BDV-T1-GE3Vishay IntertechnologiesSI3457BDV Series 30 V 0.216 Ohm 12 nC P-Channel Surface Mount Mosfet - TSOP-6
RoHS: Compliant
3000Reel
  • 3000:$0.2600
SI3459BDV-T1-GE3
DISTI # 781-SI3459BDV-GE3
Vishay IntertechnologiesMOSFET -60V Vds 20V Vgs TSOP-6
RoHS: Compliant
15221
  • 1:$0.8300
  • 10:$0.6700
  • 100:$0.5090
  • 500:$0.4200
  • 1000:$0.3360
  • 3000:$0.3050
SI3459BDV-T1-GE3Vishay Intertechnologies 1602
    SI3459BDV-T1-GE3
    DISTI # 2679686
    Vishay IntertechnologiesMOSFET, P-CH, -60V, -2.9A, TSOP0
    • 9000:£0.2110
    • 3000:£0.2150
    SI3459BDV-T1-GE3Vishay IntertechnologiesMOSFET -60V Vds 20V Vgs TSOP-6
    RoHS: Compliant
    Americas - 3000
    • 3000:$0.2910
    • 6000:$0.2790
    • 12000:$0.2730
    • 18000:$0.2640
    SI3459BDV-T1-GE3
    DISTI # 2646376
    Vishay IntertechnologiesMOSFET, P-CH, -60V, -2.9A, TSOP
    RoHS: Compliant
    0
    • 1000:$0.4500
    • 500:$0.5620
    • 100:$0.7110
    • 10:$0.9270
    • 1:$1.0500
    SI3459BDV-T1-GE3
    DISTI # 2679686
    Vishay IntertechnologiesMOSFET, P-CH, -60V, -2.9A, TSOP
    RoHS: Compliant
    0
    • 3000:$0.4160
    SI3459BDV-T1-GE3
    DISTI # XSFP00000077613
    Vishay Siliconix 
    RoHS: Compliant
    6000 in Stock0 on Order
    • 6000:$0.3467
    • 3000:$0.3714
    圖片 型號 描述
    SI3459BDV-T1-GE3

    Mfr.#: SI3459BDV-T1-GE3

    OMO.#: OMO-SI3459BDV-T1-GE3

    MOSFET -60V Vds 20V Vgs TSOP-6
    SI3459BDV-T1-E3

    Mfr.#: SI3459BDV-T1-E3

    OMO.#: OMO-SI3459BDV-T1-E3

    MOSFET -60V Vds 20V Vgs TSOP-6
    SI3459BDV-T1-E

    Mfr.#: SI3459BDV-T1-E

    OMO.#: OMO-SI3459BDV-T1-E-1190

    全新原裝
    SI3459BDV-T1-E3

    Mfr.#: SI3459BDV-T1-E3

    OMO.#: OMO-SI3459BDV-T1-E3-VISHAY

    MOSFET P-CH 60V 2.9A 6-TSOP
    SI3459BDV-T1-GE3

    Mfr.#: SI3459BDV-T1-GE3

    OMO.#: OMO-SI3459BDV-T1-GE3-VISHAY

    MOSFET P-CH 60V 2.9A 6-TSOP
    SI3459BDVT1E3

    Mfr.#: SI3459BDVT1E3

    OMO.#: OMO-SI3459BDVT1E3-1190

    Small Signal Field-Effect Transistor, 0.0022A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    SI3459BDY-T1-E3

    Mfr.#: SI3459BDY-T1-E3

    OMO.#: OMO-SI3459BDY-T1-E3-1190

    全新原裝
    SI3459BDV-T1-GE3-CUT TAPE

    Mfr.#: SI3459BDV-T1-GE3-CUT TAPE

    OMO.#: OMO-SI3459BDV-T1-GE3-CUT-TAPE-1190

    全新原裝
    可用性
    庫存:
    Available
    訂購:
    3000
    輸入數量:
    SI3459BDV-T1-GE3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$0.36
    US$0.36
    10
    US$0.34
    US$3.44
    100
    US$0.33
    US$32.55
    500
    US$0.31
    US$153.70
    1000
    US$0.29
    US$289.30
    由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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