SCTH90N65G2V-7

SCTH90N65G2V-7
Mfr. #:
SCTH90N65G2V-7
製造商:
STMicroelectronics
描述:
MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an H2PAK-7 package
生命週期:
製造商新產品
數據表:
SCTH90N65G2V-7 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
SCTH90N65G2V-7 更多信息 SCTH90N65G2V-7 Product Details
產品屬性
屬性值
製造商:
意法半導體
產品分類:
MOSFET
RoHS:
Y
技術:
碳化矽
安裝方式:
貼片/貼片
包裝/案例:
H2PAK-7
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
650 V
Id - 連續漏極電流:
90 A
Rds On - 漏源電阻:
26 mOhms
Vgs th - 柵源閾值電壓:
1.9 V
Vgs - 柵源電壓:
10 V to 22 V
Qg - 門電荷:
157 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 175 C
Pd - 功耗:
330 W
配置:
單身的
頻道模式:
增強
打包:
捲軸
系列:
SCTH90N
晶體管類型:
1 N-Channel
品牌:
意法半導體
秋季時間:
16 ns
產品類別:
MOSFET
上升時間:
38 ns
出廠包裝數量:
1000
子類別:
MOSFET
典型關斷延遲時間:
58 ns
典型的開啟延遲時間:
26 ns
Tags
SCTH, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
650 Silicon-Carbide (SiC) MOSFETs
STMicroelectronics 650 Silicon-Carbide (SiC) MOSFETs feature very low on-state resistance (RDS(on)) per area combined with excellent switching performance. This translates into more efficient and compact systems. Compared with silicon MOSFETs, SiC MOSFETs exhibit low on-state resistance per area even at high temperatures. SiC MOSFETs also feature excellent switching performance versus the best-in-class IGBTs in all temperature ranges. This simplifies the thermal design of power electronic systems.
型號 製造商 描述 庫存 價格
SCTH90N65G2V-7
DISTI # V36:1790_18695152
STMicroelectronicsSCTH90N65G2V-70
  • 1000000:$35.1100
  • 500000:$35.1200
  • 100000:$39.3700
  • 10000:$50.6500
  • 1000:$52.8000
SCTH90N65G2V-7
DISTI # 497-18352-1-ND
STMicroelectronicsSILICON CARBIDE POWER MOSFET 650
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    SCTH90N65G2V-7
    DISTI # 497-18352-6-ND
    STMicroelectronicsSILICON CARBIDE POWER MOSFET 650
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      SCTH90N65G2V-7
      DISTI # 497-18352-2-ND
      STMicroelectronicsSILICON CARBIDE POWER MOSFET 650
      RoHS: Compliant
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
        SCTH90N65G2V-7
        DISTI # SCTH90N65G2V-7
        STMicroelectronicsMOSFET 90A, 650V, 22mO (Alt: SCTH90N65G2V-7)
        RoHS: Compliant
        Min Qty: 1000
        Europe - 0
          SCTH90N65G2V-7
          DISTI # SCTH90N65G2V-7
          STMicroelectronicsMOSFET 90A, 650V, 22mO - Tape and Reel (Alt: SCTH90N65G2V-7)
          RoHS: Not Compliant
          Min Qty: 1000
          Container: Reel
          Americas - 0
          • 10000:$37.5900
          • 6000:$38.3900
          • 4000:$40.1900
          • 2000:$42.0900
          • 1000:$44.1900
          SCTH90N65G2V-7
          DISTI # 02AH6929
          STMicroelectronicsPTD WBG & POWER RF0
          • 1:$36.8800
          SCTH90N65G2V-7
          DISTI # 511-SCTH90N65G2V-7
          STMicroelectronicsMOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an H2PAK-7 package
          RoHS: Compliant
          0
          • 1:$52.8000
          • 5:$51.6200
          • 10:$49.2600
          • 25:$47.2000
          • 100:$42.7700
          • 250:$41.2900
          • 500:$36.4900
          圖片 型號 描述
          SCTH90N65G2V-7

          Mfr.#: SCTH90N65G2V-7

          OMO.#: OMO-SCTH90N65G2V-7

          MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an H2PAK-7 package
          SCTH90N65G2V-7

          Mfr.#: SCTH90N65G2V-7

          OMO.#: OMO-SCTH90N65G2V-7-STMICROELECTRONICS

          SILICON CARBIDE POWER MOSFET 650
          可用性
          庫存:
          Available
          訂購:
          5500
          輸入數量:
          SCTH90N65G2V-7的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
          參考價格(美元)
          數量
          單價
          小計金額
          1
          US$52.80
          US$52.80
          5
          US$51.62
          US$258.10
          10
          US$49.26
          US$492.60
          25
          US$47.20
          US$1 180.00
          100
          US$42.77
          US$4 277.00
          250
          US$41.29
          US$10 322.50
          500
          US$36.49
          US$18 245.00
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