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CDM22010-650 SL

CDM22010-650 SL
Mfr. #:
CDM22010-650 SL
製造商:
Central Semiconductor
描述:
MOSFET N-Ch 10A PFC FET 650V 8.0nC 0.88Ohm
生命週期:
製造商新產品
數據表:
CDM22010-650 SL 數據表
交貨:
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支付:
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ECAD Model:
更多信息:
CDM22010-650 SL 更多信息
產品屬性
屬性值
製造商：
中央半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
650 V
Id - 連續漏極電流：
10 A
Rds On - 漏源電阻：
880 mOhms
Vgs th - 柵源閾值電壓：
2 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
20 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
156 W
配置：
單身的
頻道模式：
增強
打包：
管子
系列：
清潔發展機制
晶體管類型：
1 N-Channel
品牌：
中央半導體
秋季時間：
36 ns
產品類別：
MOSFET
上升時間：
33 ns
出廠包裝數量：
750
子類別：
MOSFET
典型關斷延遲時間：
57 ns
典型的開啟延遲時間：
20 ns
單位重量：
0.211644 oz
Tags
CDM2201, CDM220, CDM22, CDM2, CDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 10A 650V TO220
CDMxx Silicon N-Channel Power MOSFETs
Central Semiconductor CDMxx Silicon N-Channel Power MOSFETs are designed for high voltage, fast switching applications like Power Factor Correction (PFC), lighting and power inverters. These MOSFETs combine high voltage capability with low rDS(ON), low threshold voltage, and low gate charge for optimal efficiency.Learn More
CxxDM Surface Mount Enhancement-Mode MOSFETs
Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs are designed for high speed pulsed amplifier and driver applications. Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs offer a very low rDS(ON) and low threshold voltage. The CMLDM5757 consists of dual P-channel enhancement-mode silicon MOSFETs. The CMLDM3757 consists of complementary N-channel and P-channel enhancement-mode silicon MOSFETs. The CMPDM7002AHC is a high current version of the 2N7002A enhancement-mode N-channel MOSFET. And the CEDM7001 is an N-channel enhancement-mode silicon MOSFET, manufactured with the N-channel DMOS process. CEDM8004VL is a P-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. CEDM7004VL is an N-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. Learn more
型號 製造商 描述 庫存 價格
CDM22010-650 SL
DISTI # CDM22010-650SL-ND		Central Semiconductor CorpMOSFET N-CH 10A 650V TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		629In Stock
  • 500:$1.1900
  • 100:$1.5300
  • 50:$1.7000
  • 10:$1.9040
  • 1:$2.1100
CDM22010-650 SL
DISTI # 610-CDM22010-650SL		Central Semiconductor CorpMOSFET N-Ch 10A PFC FET 650V 8.0nC 0.88Ohm
RoHS: Compliant		644
  • 1:$1.9200
  • 10:$1.7000
  • 100:$1.3600
  • 500:$1.2000
  • 1000:$0.9860
  • 2500:$0.9190
  • 5000:$0.8850
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可用性
庫存:
644
訂購:
2627
輸入數量:
CDM22010-650 SL的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.92
US$1.92
10
US$1.70
US$17.00
100
US$1.36
US$136.00
500
US$1.20
US$600.00
1000
US$0.99
US$986.00
2500
US$0.92
US$2 297.50
5000
US$0.88
US$4 425.00
10000
US$0.85
US$8 500.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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