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PXAC192908FVV1R250XTMA1

PXAC192908FVV1R250XTMA1
Mfr. #:
PXAC192908FVV1R250XTMA1
製造商:
Infineon Technologies
描述:
RF MOSFET Transistors RFP-LD10M
生命週期:
製造商新產品
數據表:
PXAC192908FVV1R250XTMA1 數據表
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產品屬性
屬性值
製造商
英飛凌科技
產品分類
晶體管 - FET、MOSFET - 單
打包
捲軸
部分別名
PXAC192908FV R250 SP001286760 V1
包裝盒
H-37275-6
技術
矽
Tags
PXAC192908FVV1R, PXAC192908FVV, PXAC19, PXAC1, PXAC, PXA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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IC AMP RF LDMOS
***ure Electronics
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***ical
Trans MOSFET P-CH 20V 4.3A Automotive 3-Pin SOT-23 T/R
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MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -4.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.4V; Power Dissipation Pd: 800mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***p One Stop Global
Trans RF MOSFET N-CH 12V 0.03A 4-Pin(3+Tab) SOT-143 T/R
***nell
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***ineon
Silicon N-Channel MOSFET Triode | Summary of Features: Short-channel transistor with high S / C quality factor; For low-noise, gain-controlled input stage up to 1 GHz; Pb-free (RoHS compliant) package; Qualified according AEC Q101 | Target Applications: Set Top Box; TV; Car Radio
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***S.I.T. Europe - USA - Asia
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***emi
N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ
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MOSFET, N-CH, 50V, 16A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Source Voltage Vds:50V; On Resistance
***roFlash
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***rchild Semiconductor
These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.
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ON SEMICONDUCTOR - FDS9926A - Dual MOSFET, Dual N Channel, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V
***ment14 APAC
MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V).
***(Formerly Allied Electronics)
IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223
***eco
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*** Source Electronics
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223
***nsix Microsemi
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
型號 製造商 描述 庫存 價格
PXAC192908FV-V1-R250
DISTI # PXAC192908FV-V1-R250-ND		WolfspeedIC AMP RF LDMOS
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 250:$134.8580
PXAC192908FVV1R250XTMA1
DISTI # 726-PXAC192908FVV1R2		Infineon Technologies AGRF MOSFET Transistors RFP-LD10M0
    圖片 型號 描述
    PXAC192908FV-V1-R0

    Mfr.#: PXAC192908FV-V1-R0

    OMO.#: OMO-PXAC192908FV-V1-R0

    		 RF MOSFET Transistors RF LDMOS FET
    PXAC192908FV-V1-R250

    Mfr.#: PXAC192908FV-V1-R250

    OMO.#: OMO-PXAC192908FV-V1-R250

    		 RF MOSFET Transistors RF LDMOS FET
    PXAC192908FV V1 R250

    Mfr.#: PXAC192908FV V1 R250

    OMO.#: OMO-PXAC192908FV--V1--R250

    		 RF MOSFET Transistors RFP-LD10M
    PXAC192908FV-V1

    Mfr.#: PXAC192908FV-V1

    OMO.#: OMO-PXAC192908FV-V1-1152

    		 RF MOSFET TRANSISTORS
    PXAC192908FV-V1-R0

    Mfr.#: PXAC192908FV-V1-R0

    OMO.#: OMO-PXAC192908FV-V1-R0-1152

    		 RF MOSFET TRANSISTORS
    PXAC192908FV-V1-R250

    Mfr.#: PXAC192908FV-V1-R250

    OMO.#: OMO-PXAC192908FV-V1-R250-WOLFSPEED

    		 IC AMP RF LDMOS
    PXAC192908FVV1XWSA1

    Mfr.#: PXAC192908FVV1XWSA1

    OMO.#: OMO-PXAC192908FVV1XWSA1-319

    		 RF MOSFET Transistors RFP-LD10M
    PXAC192908FVV1R0XTMA1

    Mfr.#: PXAC192908FVV1R0XTMA1

    OMO.#: OMO-PXAC192908FVV1R0XTMA1-319

    		 RF MOSFET Transistors
    PXAC192908FVV1R250XTMA1

    Mfr.#: PXAC192908FVV1R250XTMA1

    OMO.#: OMO-PXAC192908FVV1R250XTMA1-319

    		 RF MOSFET Transistors RFP-LD10M
    可用性
    庫存:
    Available
    訂購:
    5500
    輸入數量:
    PXAC192908FVV1R250XTMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$0.00
    US$0.00
    10
    US$0.00
    US$0.00
    100
    US$0.00
    US$0.00
    500
    US$0.00
    US$0.00
    1000
    US$0.00
    US$0.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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