SI2312DS-T1-E3

SI2312DS-T1-E3
Mfr. #:
SI2312DS-T1-E3
製造商:
Vishay Intertechnologies
描述:
MOSFET, FULL REEL, Transistor Polarity:N Channel, Continuous Drain Current Id:4.9A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.033ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage
生命週期:
製造商新產品
數據表:
SI2312DS-T1-E3 數據表
交貨:
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支付:
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ECAD Model:
產品屬性
屬性值
Tags
SI2312DS-T, SI2312D, SI2312, SI231, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET; N-Channel; 0.027 Ohms (Typ.) @ 4.5 V, 0.042 Ohms (Typ.) @ 1.8 V; 3.77 A
*** Americas
MOSFET N-CH VDS20V VGS 8V ID4.9A
***nell
MOSFET, N, TO-236; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:4.9A; On State Resistance:0.033ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.65V; Case Style:TO-236; Termination Type:SMD
型號 製造商 描述 庫存 價格
SI2312DS-T1-E3
DISTI # 06J7575
Vishay IntertechnologiesMOSFET, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:4.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.033ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:650mV,Power Dissipation Pd:750mW RoHS Compliant: Yes0
    SI2312DS-T1-E3
    DISTI # 781-SI2312DS-E3
    Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2312BDS-E3
    RoHS: Compliant
    0
      SI2312DS-T1-E3Vishay Intertechnologies 3
        圖片 型號 描述
        SI2312DS

        Mfr.#: SI2312DS

        OMO.#: OMO-SI2312DS-1190

        全新原裝
        SI2312DS-T1

        Mfr.#: SI2312DS-T1

        OMO.#: OMO-SI2312DS-T1-1190

        MOSFET RECOMMENDED ALT 781-SI2312BDS-E3
        SI2312DS-T1-E3

        Mfr.#: SI2312DS-T1-E3

        OMO.#: OMO-SI2312DS-T1-E3-1190

        MOSFET, FULL REEL, Transistor Polarity:N Channel, Continuous Drain Current Id:4.9A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.033ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage
        SI2312DS-T1-GE3

        Mfr.#: SI2312DS-T1-GE3

        OMO.#: OMO-SI2312DS-T1-GE3-1190

        全新原裝
        SI2312DS-T1/C2T0D

        Mfr.#: SI2312DS-T1/C2T0D

        OMO.#: OMO-SI2312DS-T1-C2T0D-1190

        全新原裝
        可用性
        庫存:
        Available
        訂購:
        4000
        輸入數量:
        SI2312DS-T1-E3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
        參考價格(美元)
        數量
        單價
        小計金額
        1
        US$0.00
        US$0.00
        10
        US$0.00
        US$0.00
        100
        US$0.00
        US$0.00
        500
        US$0.00
        US$0.00
        1000
        US$0.00
        US$0.00
        由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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