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IXFH30N60P

IXFH30N60P
Mfr. #:
IXFH30N60P
製造商:
Littelfuse
描述:
MOSFET 600V 30A
生命週期:
製造商新產品
數據表:
IXFH30N60P 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFH30N60P DatasheetIXFH30N60P Datasheet (P4-P5)
ECAD Model:
更多信息:
IXFH30N60P 更多信息
產品屬性
屬性值
製造商：
IXYS
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-247-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
30 A
Rds On - 漏源電阻：
240 mOhms
Vgs - 柵源電壓：
30 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
500 W
配置：
單身的
頻道模式：
增強
商品名：
高功率場效應晶體管
打包：
管子
高度：
21.46 mm
長度：
16.26 mm
系列：
IXFH30N60
晶體管類型：
1 N-Channel
寬度：
5.3 mm
品牌：
IXYS
正向跨導 - 最小值：
27 S
秋季時間：
25 ns
產品類別：
MOSFET
上升時間：
20 ns
出廠包裝數量：
30
子類別：
MOSFET
典型關斷延遲時間：
80 ns
典型的開啟延遲時間：
29 ns
單位重量：
0.229281 oz
Tags
IXFH30N6, IXFH30, IXFH3, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 500 W 82 nC Through Hole Power Mosfet - TO-247
***inecomponents.com
Trans MOSFET N-CH 600V 30A 3-Pin (3+Tab) TO-247
***nell
MOSFET, N, TO-247; Transistor Type:HiPerFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:30A; Resistance, Rds On:0.24ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-247; Termination Type:Through Hole; Capacitance, Ciss Typ:4000pF; Charge, Gate N-channel:82nC; Pins, No. of:3; Power, Pd:500W; Thermal Resistance, Junction to Case A:0.25°C/W; Voltage, Vds Max:600V; Time, trr Max:200ns
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 25 A, 126 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 25A I(D), 600V, 0.126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***ment14 APAC
MOSFET, N CH, 600V, 25A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.108ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:216W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:75A
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***emi
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 35 A, 98 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 35A I(D), 600V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ment14 APAC
MOSFET, N CH, 600V, 35A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.079ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:105A
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 600 V, 0.075 Ohm, 35 A, TO-247 FDmesh(TM) Power MOSFET (with fast diode)
***el Electronic
e200z650 MPC56xx Qorivva Microcontroller IC 32-Bit 116MHz 2MB (2M x 8) FLASH 208-MAPBGA (17x17)
***ure Electronics
N-Channel 600 V 88 mO Flange Mount FDmesh Power MOSFET - TO-247
***r Electronics
Power Field-Effect Transistor, 35A I(D), 600V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N CH, 600V, 35A, TO 247; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:255W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)
***ure Electronics
N-Channel 600 V 88 mOhm Flange Mount FDmesh™ II Power Mosfet - TO-247
***ical
Trans MOSFET N-CH 600V 35A Automotive 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Power Field-Effect Transistor, 35A I(D), 600V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ure Electronics
Single N-Channel 600 V 99 mOhm 70 nC CoolMOS™ Power Mosfet - TO-247-3
***ark
Mosfet, N-Ch, 600V, 37.9A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:37.9A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.089Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
***ure Electronics
Single N-Channel 600 V 60 mOhm 68 nC CoolMOS™ Power Mosfet - TO-247-3
***nell
MOSFET, N-CH, 600V, 35A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.052ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Po
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
型號 製造商 描述 庫存 價格
IXFH30N60P
DISTI # V36:1790_15877447		IXYS CorporationTrans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247
RoHS: Compliant		0
    IXFH30N60P
    DISTI # IXFH30N60P-ND    		IXYS CorporationMOSFET N-CH 600V 30A TO-247
    RoHS: Compliant
    Min Qty: 30
    Container: Tube    		Temporarily Out of Stock
    • 30:$6.0067
    IXFH30N60P
    DISTI # 747-IXFH30N60P    		IXYS CorporationMOSFET 600V 30A
    RoHS: Compliant    		223
    • 1:$9.4200
    • 10:$8.4200
    • 25:$7.3300
    • 50:$7.1800
    • 100:$6.9100
    • 250:$5.9000
    • 500:$5.5900
    • 1000:$4.7200
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    ISO1H816G

    Mfr.#: ISO1H816G

    OMO.#: OMO-ISO1H816G-91

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    可用性
    庫存:
    203
    訂購:
    2186
    輸入數量:
    IXFH30N60P的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$9.42
    US$9.42
    10
    US$8.42
    US$84.20
    25
    US$7.33
    US$183.25
    50
    US$7.18
    US$359.00
    100
    US$6.91
    US$691.00
    250
    US$5.90
    US$1 475.00
    500
    US$5.59
    US$2 795.00
    1000
    US$4.72
    US$4 720.00
    2500
    US$4.04
    US$10 100.00
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