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MRF6V2150NR1

MRF6V2150NR1
Mfr. #:
MRF6V2150NR1
製造商:
NXP / Freescale
描述:
RF MOSFET Transistors VHV6 150W
生命週期:
製造商新產品
數據表:
MRF6V2150NR1 數據表
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更多信息:
MRF6V2150NR1 更多信息
產品屬性
屬性值
製造商：
恩智浦
產品分類：
射頻 MOSFET 晶體管
RoHS：
E
晶體管極性：
N通道
技術：
矽
Vds - 漏源擊穿電壓：
110 V
獲得：
25 dB
輸出功率：
150 W
最低工作溫度：
- 65 C
最高工作溫度：
+ 150 C
安裝方式：
貼片/貼片
包裝/案例：
TO-270-4
打包：
捲軸
配置：
單雙漏雙柵極
高度：
2.64 mm
長度：
17.58 mm
工作頻率：
220 MHz
系列：
MRF6V2150N
類型：
射頻功率MOSFET
寬度：
9.07 mm
品牌：
恩智浦/飛思卡爾
頻道模式：
增強
濕氣敏感：
是的
產品類別：
射頻 MOSFET 晶體管
出廠包裝數量：
500
子類別：
MOSFET
Vgs - 柵源電壓：
- 0.5 V, 12 V
Vgs th - 柵源閾值電壓：
1.62 V
第 # 部分別名：
935316842528
單位重量：
0.058073 oz
Tags
MRF6V2150N, MRF6V21, MRF6V2, MRF6V, MRF6, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    G***r
    G***r
    LV

    Packing is good. The parcel came very quickly

    2019-01-10
    C***t
    C***t
    TH

    Received. Thank you reseller.

    2019-06-22
***W
RF Power Transistor,10 to 450 MHz, 150 W, Typ Gain in dB is 25 @ 220 MHz, 50 V, LDMOS, SOT1736
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RF FET, 110V, 450MHZ-10MHZ, TO-272WB; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 450MHz; Operating Frequency Max: 10MHz; RF Transistor Case: TO-270WB; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MRF6V2150N Series; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.62V; Package/Case:TO-272 ;RoHS Compliant: Yes
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Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.63V; Package/Case:4-TO-270 ;RoHS Compliant: Yes
***W
RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732
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***nell
TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
*** Semiconductors SCT
Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F
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Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:50µA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.68V; Package/Case:TO-272 ;RoHS Compliant: Yes
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***S.I.T. Europe - USA - Asia
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N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No
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*** Services
CoC and 2-years warranty / RFQ for pricing
***S
French Electronic Distributor since 1988
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No
MRF6Vx Lateral N-Ch Broadband RF Power MOSFETs
NXP's MRF6Vx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50 VDC, 230 MHz at all phase angles.Learn More
型號 製造商 描述 庫存 價格
MRF6V2150NR1
DISTI # MRF6V2150NR1CT-ND		NXP SemiconductorsFET RF 110V 220MHZ TO-270-4
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		884In Stock
  • 100:$52.5772
  • 10:$58.6290
  • 1:$62.4100
MRF6V2150NR1
DISTI # MRF6V2150NR1DKR-ND		NXP SemiconductorsFET RF 110V 220MHZ TO-270-4
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		884In Stock
  • 100:$52.5772
  • 10:$58.6290
  • 1:$62.4100
MRF6V2150NR1
DISTI # MRF6V2150NR1TR-ND		NXP SemiconductorsFET RF 110V 220MHZ TO-270-4
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)		500In Stock
  • 500:$48.8424
MRF6V2150NR1
DISTI # MRF6V2150NR1		Avnet, Inc.Trans MOSFET N-CH 110V 5-Pin TO-270 WB EP T/R - Tape and Reel (Alt: MRF6V2150NR1)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 500:$53.4900
  • 1000:$51.3900
  • 2000:$49.3900
  • 3000:$47.5900
  • 5000:$46.6900
MRF6V2150NR1
DISTI # 47M2188		NXP SemiconductorsRF MOSFET, N CHANNEL, 110V, TO-270, FULL REEL,Drain Source Voltage Vds:110V,Continuous Drain Current Id:2.5mA,Power Dissipation Pd:150W,Operating Frequency Min:10MHz,Operating Frequency Max:450MHz,RF Transistor Case:TO-272 RoHS Compliant: Yes0
  • 1:$73.4500
MRF6V2150NR1
DISTI # 61AC0770		NXP SemiconductorsRF FET, 110V, 450MHZ-10MHZ, TO-272WB,Drain Source Voltage Vds:110V,Continuous Drain Current Id:-,Power Dissipation Pd:-,Operating Frequency Min:450MHz,Operating Frequency Max:10MHz,RF Transistor Case:TO-270WB,No. of RoHS Compliant: Yes386
  • 1:$60.5200
  • 10:$57.5000
  • 25:$55.0900
  • 50:$53.0700
  • 100:$51.0500
  • 250:$48.8500
MRF6V2150NR1Freescale SemiconductorRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270
RoHS: Compliant		1
  • 1000:$48.3200
  • 500:$50.8600
  • 100:$52.9500
  • 25:$55.2200
  • 1:$59.4700
MRF6V2150NR1
DISTI # 841-MRF6V2150NR1		NXP SemiconductorsRF MOSFET Transistors VHV6 150W
RoHS: Compliant		102
  • 1:$60.5200
  • 5:$58.7600
  • 10:$57.5000
  • 25:$55.0900
  • 100:$51.0500
  • 250:$48.8500
  • 500:$47.3800
MRF6V2150NR1
DISTI # MRF6V2150NR1		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		0
  • 1:$61.4000
  • 10:$56.7500
  • 25:$55.0900
MRF6V2150NR1
DISTI # 2890604		NXP SemiconductorsRF FET, 110V, 450MHZ-10MHZ, TO-272WB
RoHS: Compliant		386
  • 1:$99.4800
  • 10:$93.4500
  • 100:$83.8100
MRF6V2150NR1
DISTI # 2890604		NXP SemiconductorsRF FET, 110V, 450MHZ-10MHZ, TO-272WB
RoHS: Compliant		386
  • 1:£45.7800
  • 5:£44.4600
  • 10:£41.6800
  • 50:£36.9500
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可用性
庫存:
437
訂購:
2420
輸入數量:
MRF6V2150NR1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$60.52
US$60.52
5
US$58.76
US$293.80
10
US$57.50
US$575.00
25
US$55.09
US$1 377.25
100
US$51.05
US$5 105.00
250
US$48.85
US$12 212.50
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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