SGF80N60UFTU

Mfr. #:: SGF80N60UFTU
製造商:: ON Semiconductor / Fairchild
描述:: IGBT Transistors Discrete Hi-P IGBT
生命週期:: 製造商新產品
數據表:: SGF80N60UFTU 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

包裝/案例：: TO-3PF-3

安裝方式：: 通孔

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 600 V

最大柵極發射極電壓：: 20 V

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

系列：: SGF80N60UF

打包：: 管子

連續集電極電流 Ic 最大值：: 80 A

高度：: 16.7 mm

長度：: 15.7 mm

寬度：: 5.7 mm

品牌：: 安森美半導體/飛兆半導體

產品類別：: IGBT晶體管

出廠包裝數量：: 360

子類別：: IGBT

單位重量：: 0.245577 oz

Tags: SGF80, SGF8, SGF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SGF80N60UFTU 描述

***ical: Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-3PF Rail

***r Electronics: Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel

***emi: Discrete, High Performance IGBT

*** Electronic Components: IGBT Transistors Discrete Hi-P IGBT

***nell: SGF80N60UFTU, SINGLE BIPOLAR TRANSISTORS;

***rchild Semiconductor: Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required.

***ical: Trans IGBT Chip N-CH 600V 40A 100000mW 3-Pin(3+Tab) TO-3PF Rail

***el Electronic: FAIRCHILD SEMICONDUCTOR FGAF40N60UFTU IGBT Single Transistor, General Purpose, 40 A, 600 V, 100 W, 600 V, TO-3PF, 3 Pins

***nell: IGBT,N CH,FAST W/DIO,600V,40A,TO-3PF; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3PF; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:100W

***th Star Micro: Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Product Highlights: High speed switching Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A High input impedance

***ical: Trans IGBT Chip N=-CH 600V 40A 100000mW 3-Pin(3+Tab) TO-3PF Rail

***hard Electronics: FAIRCHILD SEMICONDUCTOR FGAF40N60UFDTU IGBT Single Transistor, General Purpose, 40 A, 600 V, 100 W, 600 V, TO-3PF, 3 Pins

***nell: IGBT,N CH,FAST W/DIO,600V,40A,TO-3PF; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3PF; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:100W

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s Field Stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.

***ure Electronics: SGF23N60UF Series 600 V 23 A 75 W Through Hole PT IGBT - TO-3PF

***Yang: Trans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-3PF Rail - Rail/Tube

***r Electronics: Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel

***i-Key: IGBT ULTRA FAST 600V 12A TO-3PF

***ark: Ptpigbt To3Pf 12A 600V Rohs Compliant: Yes

***i-Key Marketplace: INSULATED GATE BIPOLAR TRANSISTO

***rchild Semiconductor: Fairchild’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverters and PFC where High Speed Switching is required feature.

***ical: Trans IGBT Chip N=-CH 1500V 10A 62500mW 3-Pin(3+Tab) TO-3PF Rail

***nell: IGBT, 1.5KV, 10A, 150DEG C, 62.5W; Available until stocks are exhausted

***rchild Semiconductor: Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGF5N150UF is designed for the switching power supply applications.

Market price

型號	製造商	描述	庫存	價格
SGF80N60UFTU DISTI # 26885511	ON Semiconductor	Trans IGBT Chip N-CH 600V 80A 110000mW 3-Pin(3+Tab) TO-3PF Tube	1440	720:$5.2985 360:$5.4641
SGF80N60UFTU DISTI # SGF80N60UFTU-ND	ON Semiconductor	IGBT 600V 80A 110W TO3PF RoHS: Compliant Min Qty: 360 Container: Tube	Limited Supply - Call	360:$4.6496
SGF80N60UFTU DISTI # SGF80N60UFTU	ON Semiconductor	Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-3PF Rail - Rail/Tube (Alt: SGF80N60UFTU) RoHS: Compliant Min Qty: 360 Container: Tube	Americas - 0	360:$3.0900 720:$2.9900 1440:$2.9900 2160:$2.9900 3600:$2.8900
SGF80N60UFTU DISTI # SGF80N60UFTU	ON Semiconductor	Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-3PF Rail (Alt: SGF80N60UFTU) RoHS: Compliant Min Qty: 1	Europe - 0	1:€4.0900 10:€3.2900 25:€3.1900 50:€2.9900 100:€2.8900 500:€2.8900 1000:€2.7900
SGF80N60UFTU DISTI # 512-SGF80N60UFTU	ON Semiconductor	IGBT Transistors Discrete Hi-P IGBT RoHS: Compliant	0
SGF80N60UFTU	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel RoHS: Compliant	23040	1000:$5.5600 500:$5.8500 100:$6.0900 25:$6.3500 1:$6.8400

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