CGHV96050F2

Mfr. #:: CGHV96050F2
製造商:: N/A
描述:: RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
生命週期:: 製造商新產品
數據表:: CGHV96050F2 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: CGHV96050F2 更多信息

產品屬性
屬性值

製造商：: 科沃

產品分類：: 射頻 JFET 晶體管

RoHS：: Y

技術：: 氮化鎵碳化矽

Vds - 漏源擊穿電壓：: 32 V

Vgs - 柵源擊穿電壓：: 100 V

Pd - 功耗：: 45 W

安裝方式：: 貼片/貼片

打包：: 托盤

配置：: 單身的

高度：: 4.064 mm

長度：: 9.652 mm

寬度：: 5.842 mm

品牌：: 科沃

柵源截止電壓：: - 2.9 V

濕氣敏感：: 是的

產品類別：: 射頻 JFET 晶體管

出廠包裝數量：: 50

子類別：: 晶體管

第 # 部分別名：: 1092444

Tags: CGHV960, CGHV9, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV96050F2 描述

***i-Key: FET RF 100V 9.6GHZ 440210

CGHV96050F2 更多信息

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

X-Band GaN HEMTs & MMICs: Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More

Market price

型號	製造商	描述	庫存	價格
CGHV96050F2 DISTI # CGHV96050F2-ND	Wolfspeed	RF MOSFET HEMT 40V 440210 RoHS: Compliant Min Qty: 1 Container: Tray	98In Stock	1:$458.6800
CGHV96050F2-TB DISTI # CGHV96050F2-TB-ND	Wolfspeed	TEST FIXTURE FOR CGHV96050F2 RoHS: Compliant Min Qty: 1 Container: Bulk	3In Stock	1:$550.0000
CGHV96050F2 DISTI # 941-CGHV96050F2	Cree, Inc.	RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt RoHS: Compliant	5	1:$458.6800
CGHV96050F2-TB DISTI # 941-CGHV96050F2-TB	Cree, Inc.	RF Development Tools Test Board without GaN HEMT RoHS: Not compliant	2	1:$550.0000
CGHV96050F2-TB DISTI # CGHV96050F2-TB	Wolfspeed	RF TRANSISTOR TEST FIXTURE RoHS: Compliant	2	2:$550.0000

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