FDR836P

Mfr. #:: FDR836P
製造商:: Rochester Electronics, LLC
描述:: P-Channel 2.5V Specified MOSFET - Bulk (Alt: FDR836P)
生命週期:: 製造商新產品
數據表:: FDR836P 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

Tags: FDR83, FDR8, FDR

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDR836P 描述

***et: P-Channel 2.5V Specified MOSFET

***ser: Not available to order DISC BY MFG 2/02

***(Formerly Allied Electronics): SI3460DDV-T1-GE3 N-channel MOSFET Transistor; 7.9 A; 20 V; 6-Pin TSOP

***itex: Transistor: N-MOSFET; unipolar; 20V; 7.9A; 0.028ohm; 2.7W; -55+150 deg.C; SMD; TSOP6

***ure Electronics: N-Channel 20 V 0.028 Ohm 2.7 W Surface Mount Power Mosfet - TSOP-6

***ark: Mosfet,n Ch,d-S,20V,7.9A,tsop6, Full Reel; Channel Type:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.9A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400Mv Rohs Compliant: No

***ment14 APAC: MOSFET,N CH,D-S,20V,7.9A,TSOP6; Transistor Polarity:N Channel; Continuous Drain Current Id:7.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.2A; Power Dissipation Pd:1.7W; Voltage Vgs Max:8V

***emi: N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.2A, 24mΩ

*** Source Electronics: Trans MOSFET N-CH 20V 6.2A 6-Pin TSOT-23 T/R / MOSFET N-CH 20V 6.2A SSOT-6

***ark: Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:820mV; Power Dissipation:1.6W; No. of Pins:6Pins RoHS Compliant: Yes

***rchild Semiconductor: This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.

***Yang: Transistor MOSFET Array Dual N-CH 20V 7.5A 8-Pin SOIC T/R - Tape and Reel

***emi: Dual N-Channel PowerTrench™ MOSFET, 2.5V Specified, 20V, 7.5A, 18mΩ

***ure Electronics: Dual N-Channel 20 V 18 mOhm SMT PowerTrench Mosfet - SOIC-8

***rchild Semiconductor: These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

***ment14 APAC: MOSFET, DUAL, NN, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:7.5A; Current Id Max:7.5A; No. of Transistors:2; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:20A; SMD Marking:FDS6890A; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:800mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Min:1.5V

***emi: N-Channel PowerTrench® MOSFET 20V, 7A, 26mΩ

***ure Electronics: N-Channel 20 V 7 A 14 mOhm Power Trench® Mosfet - MicorFET

***rchild Semiconductor: This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(on) @ VGS = 1.5 V on special MicroFET leadframe.

***nell: MOSFET, N CH, 20V, 7A, MFET1.6X1.6; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited

***et Europe: Trans MOSFET P-CH 20V 7A 6-Pin TSOP T/R

***ure Electronics: P-CH MOSFET TSOP-6 20V 27MOHM @ 4.5V

***ment14 APAC: MOSFET, P CH, -20V, -8A, TSOP-6

***ronik: P-CHANNEL-FET 7A 20V TSOP-6 RoHSconf

***nell: MOSFET, P CH, -20V, 0.0347OHM, -8A, TSOP; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0347ohm; Rds(on) Test Voltage Vgs:-1.8V; Power Dissipation Pd:2.97W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TSOP; No. of Pins:6; MSL:-

***ure Electronics: SI3493BDV Series 20 V 0.0275 O Surface Mount Power Mosfet - TSOP-6

***ical: Trans MOSFET P-CH 20V 7A 6-Pin TSOP T/R

***mal: P-Ch MOSFET TSOP-6 20V 27mohm @ 4.5V

***id Electronics: Small Signal Field-Effect Transistor 8A I(D)

***el Electronic: MOSFET 20V 8.0A 2.97W 27.5mohm @ 4.5V

Market price

型號	製造商	描述	庫存	價格
FDR836P DISTI # FDR836P	ON Semiconductor	P-Channel 2.5V Specified MOSFET - Bulk (Alt: FDR836P) RoHS: Not Compliant Min Qty: 404 Container: Bulk	Americas - 0	4040:$0.7649 2020:$0.7839 1212:$0.7939 808:$0.8049 404:$0.8099
FDR836P DISTI # 512-FDR836P	ON Semiconductor	MOSFET DISC BY MFG 2/02 RoHS: Not compliant	0
FDR836P	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 6.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant	15000	1000:$0.8200 500:$0.8600 100:$0.8900 25:$0.9300 1:$1.0000

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