GS842Z36CB-250

Mfr. #:: GS842Z36CB-250
製造商:: GSI Technology
描述:: SRAM 2.5 or 3.3V 128K x 36 4M
生命週期:: 製造商新產品
數據表:: GS842Z36CB-250 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: GS842Z36CB-250 更多信息

產品屬性
屬性值

製造商：: GSI技術

產品分類：: 靜態隨機存取存儲器

內存大小：: 4 Mbit

組織：: 128 k x 36

訪問時間：: 5.5 ns

最大時鐘頻率：: 250 MHz

接口類型：: 平行線

電源電壓 - 最大值：: 3.6 V

電源電壓 - 最小值：: 2.3 V

電源電流 - 最大值：: 155 mA, 195 mA

最低工作溫度：: 0 C

最高工作溫度：: + 70 C

安裝方式：: 貼片/貼片

包裝/案例：: BGA-119

打包：: 托盤

內存類型：: 特別提款權

系列：: GS842Z36CB

類型：: NBT 管道/流通

品牌：: GSI技術

濕氣敏感：: 是的

產品類別：: 靜態隨機存取存儲器

出廠包裝數量：: 84

子類別：: 內存和數據存儲

商品名：: 靜態隨機存取存儲器

Tags: GS842Z36CB-2, GS842Z36CB, GS842Z36C, GS842Z3, GS842, GS84, GS8

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

GS842Z36CB-250 描述

***roFlash: SRAM Chip Sync Quad 2.5V/3.3V 4M-Bit 128K x 36 5.5ns/2.5ns 119-Pin F-BGA

*** Services: CoC and 2-years warranty / RFQ for pricing

***ure Electronics: CY62148EV30 Series 4 Mb (512 K x 8) 2.2 - 3.6 V 45 ns Static RAM - VFBGA-36

***eco: SRAM Chip ASynchronous Single 2.5 Volt/3.3 Volt 4M-bit 512K x 8 45ns 36-Pin VFBGA

***nell: STATIC RAM, 4MBIT, 45NS, VFBGA-36

***-Wing Technology: e1 Surface Mount CY62148 Tray ic memory 1MHz 45ns 6mm 20mA

***ponent Stockers USA: 512K X 8 STANDARD SRAM 45 ns BGA36

***i-Key: IC SRAM 4MBIT PARALLEL 36VFBGA

***p One Stop Global: SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin VFBGA Tray

***-Wing Technology: e1 Surface Mount CY7C1041 Tray ic memory 100MHz 10ns 8mm 90mA

***ponent Stockers USA: 256K X 16 STANDARD SRAM 10 ns PBGA48

***nell: SRAM, 4MB, 256KX16, 3.3V, VFBGA48

***DA Technology Co., Ltd.: Product Description Demo for Development.

***or: IC SRAM 4MBIT PARALLEL 48VFBGA

***S: French Electronic Distributor since 1988

***ment14 APAC: SRAM, 4MB, 256KX16, 3.3V, VFBGA48; Memory Size:4Mbit; Memory Configuration:256K x 16; Access Time:10ns; Supply Voltage Range:3V to 3.6V; Memory Case Style:FBGA; No. of Pins:48; Operating Temperature Range:-40°C to +85°C; SVHC:No SVHC (20-Jun-2011); Frequency:100MHz; Memory Configuration:256K x 16; Memory Size:4Mbit; Memory Type:SRAM; Memory Voltage Vcc:3.3V; Package / Case:FBGA; Supply Voltage Max:3.6V; Supply Voltage Min:3.3V; Termination Type:SMD

***ure Electronics: CY62147EV30 Series 4 Mb (256 K x 16) 2.2 - 3.6 V 45 ns Static RAM - VFBGA-48

***ical: SRAM Chip Async Single 3V 4M-Bit 256K x 16 45ns 48-Pin VFBGA Tray

***ress Semiconductor SCT: Asynchronous SRAM, 4096 Kb Density, 45 ns Speed, VFBGA-48, RoHS

***-Wing Technology: e1 Surface Mount CY62147 Tray ic memory 1MHz 45ns 6mm 20mA

***ponent Stockers USA: 256K X 16 STANDARD SRAM 45 ns PBGA48

***i-Key: IC SRAM 4MBIT PARALLEL 48VFBGA

***or: STANDARD SRAM, 256KX16, 45NS PBG

***egrated Device Technology: 3.3V 128K x 36 Synchronous Flow-Through SRAM w/3.3V I/O

***NGYU ELECTRONICS: IC SRAM 4.5M PARALLEL 165CABGA

*** Electronic Components: SRAM 4M 3.3V I/O PBSRAM SLOW X

***egrated Device Technology: 3.3V 128K x 36 Synchronous Flow-Through SRAM w/3.3V I/O

***NGYU ELECTRONICS: IC SRAM 4.5M PARALLEL 165CABGA

*** Electronic Components: SRAM 4M 3.3V I/O PBSRAM SLOW X

***-Wing Technology: Synchronous Active BALL 3-STATE (Memory Format) Memory 85C 3.465V 4.5Mb 210mA

***egrated Device Technology: 3.3V 128K x 36 Synchronous Flow-Through SRAM w/3.3V I/O

***ource: IC SRAM 4.5M PARALLEL 165CABGA

*** Electronic Components: SRAM 4M 3.3V I/O PBSRAM SLOW X

GS842Z36CB-250 更多信息

NBT SRAMs: GSI Technology NBT SRAMs are 144Mbit and 288Mbit Synchronous Static SRAMs that allow utilization of all available bus bandwidth. The SRAMs achieve this by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. The devices' simplified interface is designed to use a data bus's maximum bandwidth. Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock.

相關產品

圖片	型號	描述
	Mfr.#: GS842Z36CGB-200I OMO.#: OMO-GS842Z36CGB-200I	SRAM 2.5 or 3.3V 128K x 36 4M
	Mfr.#: GS842Z36CB-100I OMO.#: OMO-GS842Z36CB-100I	SRAM 2.5 or 3.3V 128K x 36 4M
	Mfr.#: GS842Z36CB-166 OMO.#: OMO-GS842Z36CB-166	SRAM 2.5 or 3.3V 128K x 36 4M
	Mfr.#: GS842Z36CGB-100I OMO.#: OMO-GS842Z36CGB-100I	SRAM 2.5 or 3.3V 128K x 36 4M
	Mfr.#: GS842Z36CGB-250 OMO.#: OMO-GS842Z36CGB-250	SRAM 2.5 or 3.3V 128K x 36 4M
	Mfr.#: GS842Z36CB-200M OMO.#: OMO-GS842Z36CB-200M	SRAM 2.5 or 3.3V 128K x 36 4M
	Mfr.#: GS842Z36CGB-200 OMO.#: OMO-GS842Z36CGB-200	SRAM 2.5 or 3.3V 128K x 36 4M
	Mfr.#: GS842Z36CB-250I OMO.#: OMO-GS842Z36CB-250I	SRAM 2.5 or 3.3V 128K x 36 4M
	Mfr.#: GS842Z36AB-100 OMO.#: OMO-GS842Z36AB-100-1190	全新原裝
	Mfr.#: GS842Z36AB100 OMO.#: OMO-GS842Z36AB100-1190	全新原裝