IRG7PH35UD1-E

Mfr. #:: IRG7PH35UD1-E
製造商:: Infineon Technologies
描述:
生命週期:: 製造商新產品
數據表:: IRG7PH35UD1-E 數據表
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ECAD Model:

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: IGBT - 單

系列: -

打包: 管子

單位重量: 1.340411 oz

安裝方式: 通孔

包裝盒: TO-247-3

輸入類型: 標準

安裝型: 通孔

供應商-設備-包: TO-247AD

最大功率: 179W

反向恢復時間trr: -

電流收集器 Ic-Max: 50A

電壓收集器發射極擊穿最大值: 1200V

IGBT型: 溝

電流收集器脈衝Icm: 150A

Vce-on-Max-Vge-Ic: 2.2V @ 15V, 20A

開關能源: 620μJ (off)

柵極電荷: 130nC

Td-on-off-25°C: -/160ns

測試條件: 600V, 20A, 10 Ohm, 15V

鈀功耗: 179 W

集電極-發射極-電壓-VCEO-Max: 1.2 kV

集電極-發射極-飽和-電壓: 2.2 V

25-C 時的連續集電極電流: 50 A

Tags: IRG7PH35UD1-E, IRG7PH35UD1, IRG7PH35UD, IRG7PH35, IRG7PH3, IRG7PH, IRG7P, IRG7, IRG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

型號	製造商	描述	庫存	價格
IRG7PH35UD1-EP DISTI # IRG7PH35UD1-EP-ND	Infineon Technologies AG	IGBT 1200V 50A 179W TO247 RoHS: Compliant Min Qty: 350 Container: Tube	Limited Supply - Call
IRG7PH35UD1-EP DISTI # 76R0795	Infineon Technologies AG	INSULATED GATE BIPOLAR TRANSISTOR,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:179W,Collector Emitter Voltage V(br)ceo:-,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes	2	1:$5.9600 10:$5.0700 25:$4.9800 50:$4.6900 100:$4.3900 250:$4.1700 500:$3.7100
IRG7PH35UD1-EP DISTI # 942-IRG7PH35UD1-EP	Infineon Technologies AG	IGBT Transistors IGBT DISCRETES RoHS: Compliant	15	1:$5.9600 10:$5.0700 25:$4.9800 100:$4.3900 250:$4.1700 500:$3.7100 1000:$3.1400 2500:$2.9000
IRG7PH35UD1-EP	International Rectifier	Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AD RoHS: Compliant	951800	1000:$2.9600 500:$3.1200 100:$3.2400 25:$3.3800 1:$3.6400
IRG7PH35UD1-EP DISTI # 9074921P	Infineon Technologies AG	IGBT N-CHANNEL 1200V 50A TO-247AD, TU	15	10:£3.9550 50:£3.8900 100:£3.2900 250:£3.1650
IRG7PH35UD1-EP DISTI # 1822979	Infineon Technologies AG	INSULATED GATE BIPOLAR TRANSISTOR RoHS: Compliant	2	1:£5.4490 10:£4.0120 100:£3.3320 250:£3.2050 500:£3.0500
IRG7PH35UD1-EP DISTI # 1822979	Infineon Technologies AG	INSULATED GATE BIPOLAR TRANSISTOR RoHS: Compliant	2	1:$9.4300 10:$8.0300 25:$7.8800 100:$6.9600 250:$6.6000 500:$5.8700 1000:$4.9700 2500:$4.5900

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