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PD57018TR-E

PD57018TR-E
Mfr. #:
PD57018TR-E
製造商:
STMicroelectronics
描述:
RF MOSFET Transistors POWER R.F.
生命週期:
製造商新產品
數據表:
PD57018TR-E 數據表
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ECAD Model:
更多信息:
PD57018TR-E 更多信息 PD57018TR-E Product Details
產品屬性
屬性值
製造商：
意法半導體
產品分類：
射頻 MOSFET 晶體管
RoHS：
Y
晶體管極性：
N通道
技術：
矽
Id - 連續漏極電流：
2.5 A
Vds - 漏源擊穿電壓：
65 V
Rds On - 漏源電阻：
760 mOhms
獲得：
16.5 dB
輸出功率：
18 W
最低工作溫度：
- 65 C
最高工作溫度：
+ 150 C
安裝方式：
貼片/貼片
包裝/案例：
PowerSO-10RF-Formed-4
打包：
捲軸
配置：
單身的
高度：
3.5 mm
長度：
7.5 mm
工作頻率：
1 GHz
系列：
PD57018-E
類型：
射頻功率MOSFET
寬度：
9.4 mm
品牌：
意法半導體
頻道模式：
增強
濕氣敏感：
是的
Pd - 功耗：
31.7 W
產品類別：
射頻 MOSFET 晶體管
出廠包裝數量：
600
子類別：
MOSFET
Vgs - 柵源電壓：
20 V
單位重量：
0.105822 oz
Tags
PD5701, PD570, PD57, PD5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***p One Stop
Trans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***icroelectronics
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***p One Stop
Trans RF MOSFET N-CH 65V 2.5A 3-Pin(2+Tab) PowerSO-10RF (Straight lead) T/R
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***th Star Micro
Transistor MOSFET N-CH 65V 2.5A 4-Pin (2+2Tab) PowerSO-10RF (Formed lead) Tube
***icroelectronics
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***ure Electronics
PD57018-E Series 1 GHz 18 W 65 V N-Channel RF Power Transistor - POWERSO-10RF
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***nell
RF TRANSISTOR, 65V, 945MHZ, POWERSO10RF; Drain Source Voltage Vds: 65V; Continuous Drain Current Id: 2.5A; Power Dissipation Pd: 31.7W; Operating Frequency Min: -; Operating Frequency Max: 945MHz; RF Transistor Case: PowerSO-1
***(Formerly Allied Electronics)
IRF7103PBF Dual N-channel MOSFET Transistor, 3 A, 50 V, 8-Pin SOIC | Infineon IRF7103PBF
***eco
Transistor MOSFET N Channel 50 Volt 3 Amp 8-Pin SOIC Tape and Reel
***itex
Transistor: 2xN-MOSFET; unipolar; 50V; 3A; 0.13ohm; 2W; -55+150 deg.C; SMD; SO8
***ure Electronics
Dual N-Channel 50 V 0.13 Ohm 12 nC HEXFET® Power Mosfet - SOIC-8
***et Japan
Transistor MOSFET Array Dual N-CH 50V 3A 8-Pin SOIC T/R
***nell
MOSFET, DUAL NN LOGIC SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Di
***ark
Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:50V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:3A; Continuous Drain Current Id P Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes |Infineon IRF7103TRPBF.
***(Formerly Allied Electronics)
MOSFET; P-Ch; Vds -60V; Vgs +/- 20V; Rds(on) 150mohm; Id 4.7A; SO-8; Pd 5W
***ure Electronics
SI9407BDY Series 60 V 0.12 Ohm 22 nC P-Channel Surface Mount Mosfet - SOIC-8
***enic
60V 4.7A 2.4W 120m´Î@10V3.2A 3V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS
***nsix Microsemi
Small Signal Field-Effect Transistor, 4.7A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Channel Type:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:5W Rohs Compliant: No
***nell
MOSFET, P CH, 60V, 4.7A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C
***(Formerly Allied Electronics)
IRFL014TRPBF N-channel MOSFET Transistor; 2.7 A; 60 V; 3 + Tab-Pin SOT-223
***ure Electronics
Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - SOT-223-3
***ical
Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R
***SIT Distribution GmbH
Small Signal Field-Effect Transistor, 2.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
型號 製造商 描述 庫存 價格
PD57018TR-E
DISTI # V72:2272_17706242		STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R
RoHS: Compliant		335
  • 250:$28.8500
  • 100:$30.3200
  • 25:$33.3100
  • 10:$34.6500
  • 1:$37.4500
PD57018TR-E
DISTI # 497-6477-1-ND		STMicroelectronicsTRANSISTOR RF POWERSO-10
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    PD57018TR-E
    DISTI # 497-6477-6-ND    		STMicroelectronicsTRANSISTOR RF POWERSO-10
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      PD57018TR-E
      DISTI # 497-6477-2-ND      		STMicroelectronicsTRANSISTOR RF POWERSO-10
      RoHS: Compliant
      Min Qty: 600
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 600:$23.1702
      PD57018TR-E
      DISTI # 27537212      		STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R
      RoHS: Compliant      		335
      • 250:$28.8600
      • 100:$30.3100
      • 25:$33.3300
      • 10:$34.6700
      • 1:$37.5400
      PD57018TR-E
      DISTI # PD57018TR-E      		STMicroelectronicsTrans MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R - Tape and Reel (Alt: PD57018TR-E)
      RoHS: Compliant
      Min Qty: 600
      Container: Reel      		Americas - 0
      • 600:$25.0900
      • 1200:$23.8900
      • 2400:$22.8900
      • 3600:$21.7900
      • 6000:$21.3900
      PD57018-E
      DISTI # 511-PD57018-E      		STMicroelectronicsRF MOSFET Transistors POWER RF Transistor
      RoHS: Compliant      		92
      • 1:$32.4100
      • 5:$32.0700
      • 10:$29.8900
      • 25:$28.5500
      • 100:$25.5300
      • 250:$24.3500
      PD57018TR-E
      DISTI # 511-PD57018TR-E      		STMicroelectronicsRF MOSFET Transistors POWER R.F.
      RoHS: Compliant      		0
      • 1:$32.4100
      • 5:$32.0700
      • 10:$29.8900
      • 25:$28.5500
      • 100:$25.5300
      • 250:$24.3500
      • 600:$23.1800
      PD57018TR-E
      DISTI # PD57018TR-E      		STMicroelectronicsRF POWER TRANSISTOR
      RoHS: Compliant      		0
      • 600:$23.0600
      • 1000:$21.9000
      PD57018TR-E
      DISTI # C1S730200364012      		STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R
      RoHS: Compliant      		335
      • 250:$28.9200
      • 100:$30.2800
      • 25:$33.5700
      • 10:$34.8600
      • 1:$37.4400
      圖片 型號 描述
      PD57006S

      Mfr.#: PD57006S

      OMO.#: OMO-PD57006S

      		 RF MOSFET Transistors N-Ch 65 Volt 1.0 Amp
      PD57060STR-E

      Mfr.#: PD57060STR-E

      OMO.#: OMO-PD57060STR-E

      		 RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic Fam
      PD57002SK

      Mfr.#: PD57002SK

      OMO.#: OMO-PD57002SK-1190

      		 全新原裝
      PD57006

      Mfr.#: PD57006

      OMO.#: OMO-PD57006-1152

      		 RF MOSFET, N CHANNEL, 28V, POWERSO-10RF, Drain Source Voltage Vds:65V, Continuous Drain Current Id:1A, Power Dissipation Pd:20W, Operating Frequency Min:925MHz, Operating Frequency Max:960MHz, R
      PD57006E

      Mfr.#: PD57006E

      OMO.#: OMO-PD57006E-1190

      		 全新原裝
      PD57045S-E

      Mfr.#: PD57045S-E

      OMO.#: OMO-PD57045S-E-STMICROELECTRONICS

      		 FET RF 65V 945MHZ PWRSO-10
      PD57070

      Mfr.#: PD57070

      OMO.#: OMO-PD57070-1190

      		 全新原裝
      PD57070SE

      Mfr.#: PD57070SE

      OMO.#: OMO-PD57070SE-1190

      		 全新原裝
      PD57018S-E

      Mfr.#: PD57018S-E

      OMO.#: OMO-PD57018S-E-STMICROELECTRONICS

      		 MOSFET 8 BITS MICROCONTR
      PD57030

      Mfr.#: PD57030

      OMO.#: OMO-PD57030-STMICROELECTRONICS

      		 FET RF 65V 945MHZ PWRSO-10
      可用性
      庫存:
      Available
      訂購:
      4500
      輸入數量:
      PD57018TR-E的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$32.41
      US$32.41
      5
      US$32.07
      US$160.35
      10
      US$29.89
      US$298.90
      25
      US$28.55
      US$713.75
      100
      US$25.53
      US$2 553.00
      250
      US$24.35
      US$6 087.50
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