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HGTG20N60A4D

HGTG20N60A4D
Mfr. #:
HGTG20N60A4D
製造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors 600V
生命週期:
製造商新產品
數據表:
HGTG20N60A4D 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
IGBT晶體管
RoHS：
E
技術：
矽
包裝/案例：
TO-247-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
600 V
集電極-發射極飽和電壓：
1.8 V
最大柵極發射極電壓：
20 V
25 C 時的連續集電極電流：
70 A
Pd - 功耗：
290 W
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
系列：
HGTG20N60A4D
打包：
管子
連續集電極電流 Ic 最大值：
70 A
高度：
20.82 mm
長度：
15.87 mm
寬度：
4.82 mm
品牌：
安森美半導體/飛兆半導體
連續集電極電流：
70 A
柵極-發射極漏電流：
+/- 250 nA
產品類別：
IGBT晶體管
出廠包裝數量：
450
子類別：
IGBT
第 # 部分別名：
HGTG20N60A4D_NL
單位重量：
0.225401 oz
Tags
HGTG20N60A4D, HGTG20N60A, HGTG20N6, HGTG20, HGTG2, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail
***inecomponents.com
600V, SMPS SERIES NCH IGBT W/ ANTI-PARALLEL HYPERFAST DIODE
***ure Electronics
HGTG20N60A4 Series 600 V 70 A Flange Mount SMPS N-Channel IGBT-TO-247
***et
PWR IGBT 45A,600V,SMPS N-CH W/DIODE TO-247
***Components
TRANSISTOR IGBT N-CH 600V 70A TO247
***ark
Pt P To247 45A 600V Smps Rohs Compliant: Yes
***i-Key
IGBT N-CH SMPS 600V 70A TO247
***eco
ADDED FOR DPP(INTERSIL) PKG ID CHANGE<AZ
***Semiconductor
600V, SMPS IGBT
***nell
IGBT, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:70A; Voltage, Vce Sat Max:2.7V; Power Dissipation:290W; Case Style:TO-247; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:280A; Device Marking:HGTG20N60A4D; No. of Pins:3; Power, Pd:290W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:32ns; Time, Fall Typ:32ns; Time, Rise:12ns; Transistors, No. of:1
***rchild Semiconductor
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372.This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Current Temperature:25°C; Device Marking:HGTG20N60A4D; Fall Time Typ:32ns; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
型號 製造商 描述 庫存 價格
HGTG20N60A4D
DISTI # V36:1790_06359605		ON SemiconductorPT P TO247 45A 600V SMPS1362
  • 500:$2.4080
  • 250:$2.8710
  • 100:$3.3210
  • 50:$3.6400
  • 25:$3.7750
  • 10:$3.7820
  • 1:$4.3540
HGTG20N60A4D
DISTI # V99:2348_06359605		ON SemiconductorPT P TO247 45A 600V SMPS450
  • 500:$2.4080
  • 250:$2.8710
  • 100:$3.3210
  • 50:$3.6400
  • 25:$3.7750
  • 10:$3.7820
  • 1:$4.3540
HGTG20N60A4D
DISTI # HGTG20N60A4DFS-ND		ON SemiconductorIGBT 600V 70A 290W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		337In Stock
  • 1350:$2.9565
  • 900:$3.4739
  • 450:$3.8520
  • 10:$4.9070
  • 1:$5.4400
HGTG20N60A4D
DISTI # 31882442		ON SemiconductorPT P TO247 45A 600V SMPS5215
  • 4500:$1.8144
  • 450:$1.9104
HGTG20N60A4D
DISTI # 31600626		ON SemiconductorPT P TO247 45A 600V SMPS1362
  • 500:$2.4080
  • 250:$2.8710
  • 100:$3.3210
  • 50:$3.6400
  • 25:$3.7750
  • 10:$3.7820
  • 4:$4.3540
HGTG20N60A4D
DISTI # 31262149		ON SemiconductorPT P TO247 45A 600V SMPS450
  • 500:$2.4080
  • 250:$2.8710
  • 100:$3.3210
  • 50:$3.6400
  • 25:$3.7750
  • 10:$3.7820
  • 3:$4.3540
HGTG20N60A4D
DISTI # HGTG20N60A4D		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG20N60A4D)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 9000
  • 450:$1.9900
  • 900:$1.9900
  • 1800:$1.9900
  • 2700:$1.9900
  • 4500:$1.8900
HGTG20N60A4D
DISTI # HGTG20N60A4D		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG20N60A4D)
RoHS: Compliant
Min Qty: 450		Asia - 0
  • 450:$3.1792
  • 900:$3.0569
  • 1350:$2.9437
  • 2250:$2.8386
  • 4500:$2.7407
  • 11250:$2.6493
  • 22500:$2.6059
HGTG20N60A4D
DISTI # HGTG20N60A4D		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG20N60A4D)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€2.4900
  • 10:€2.2900
  • 25:€2.1900
  • 50:€2.0900
  • 100:€1.9900
  • 500:€1.8900
  • 1000:€1.7900
HGTG20N60A4D
DISTI # 95B2568		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 95B2568)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$5.1800
  • 10:$4.4300
  • 25:$4.2400
  • 50:$4.0500
  • 100:$3.8600
  • 250:$3.6700
HGTG20N60A4D
DISTI # 95B2568		ON SemiconductorSINGLE IGBT, 600V, 70A,DC Collector Current:70A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:290W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes397
  • 250:$3.5400
  • 100:$3.7200
  • 50:$3.9000
  • 25:$4.0900
  • 10:$4.2700
  • 1:$4.9900
HGTG20N60A4D
DISTI # 25M9637		ON SemiconductorIGBT Single Transistor, General Purpose, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 RoHS Compliant: Yes2606
  • 500:$3.0300
  • 250:$3.3800
  • 100:$3.5600
  • 50:$3.7400
  • 25:$3.9300
  • 10:$4.1100
  • 1:$4.8300
HGTG20N60A4D
DISTI # 512-HGTG20N60A4D		ON SemiconductorIGBT Transistors 600V
RoHS: Compliant		779
  • 1:$4.8300
  • 10:$4.1100
  • 100:$3.5600
  • 250:$3.3800
  • 500:$3.0300
HGTG20N60A4D
DISTI # HGTG20N60A4D		ON SemiconductorTransistor: IGBT,600V,40A,190W,TO247-3459
  • 1:$4.0900
  • 5:$3.7900
  • 30:$2.9700
  • 120:$2.5900
HGTG20N60A4D
DISTI # HGTG20N60A4D		ON SemiconductorTransistor: IGBT,600V,40A,190W,TO247-3455
  • 1:$4.0800
  • 5:$3.7900
  • 30:$2.9700
  • 120:$2.5900
HGTG20N60A4DFairchild Semiconductor Corporation 
RoHS: Compliant		Europe - 8
    HGTG20N60A4D
    DISTI # 1057679    		ON SemiconductorIGBT, TO-247
    RoHS: Compliant    		2645
    • 500:$4.9700
    • 250:$5.5400
    • 100:$5.8400
    • 10:$6.7500
    • 1:$7.9300
    HGTG20N60A4D
    DISTI # 1057679    		ON SemiconductorIGBT, TO-247
    RoHS: Compliant    		2631
    • 500:£2.3700
    • 250:£2.6300
    • 100:£2.7700
    • 10:£3.2000
    • 1:£4.1900
    HGTG20N60A4D
    DISTI # XSFP00000149449    		Fairchild Semiconductor Corporation 
    RoHS: Compliant    		390 in Stock0 on Order
    • 390:$4.4500
    • 60:$4.9000
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    可用性
    庫存:
    694
    訂購:
    2677
    輸入數量:
    HGTG20N60A4D的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$4.83
    US$4.83
    10
    US$4.11
    US$41.10
    100
    US$3.56
    US$356.00
    250
    US$3.38
    US$845.00
    500
    US$3.03
    US$1 515.00
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