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CPH6020-TL-E

CPH6020-TL-E
Mfr. #:
CPH6020-TL-E
製造商:
ON Semiconductor
描述:
Bipolar Transistors - BJT BIP NPN 0.15A 8V FT=16G
生命週期:
製造商新產品
數據表:
CPH6020-TL-E 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
雙極晶體管 - BJT
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
SOT-26-6
晶體管極性：
NPN
配置：
雙重的
集電極-發射極電壓 VCEO 最大值：
8 V
集電極-基極電壓 VCBO：
15 V
發射極基極電壓 VEBO：
2 V
增益帶寬積 fT：
16 GHz
最高工作溫度：
+ 150 C
系列：
CPH6020
直流電流增益 hFE 最大值：
150
打包：
捲軸
品牌：
安森美半導體
連續集電極電流：
150 mA
DC 集電極/基極增益 hfe 最小值：
60
Pd - 功耗：
700 mW
產品類別：
BJT - 雙極晶體管
出廠包裝數量：
3000
子類別：
晶體管
單位重量：
0.000529 oz
Tags
CPH602, CPH60, CPH6, CPH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
RF Transistor, NPN Single, 8 V, 150 mA, fT = 16 GHz
***r Electronics
RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, NPN
***ark
Rf Transistor, 8V, 150Ma, Ft=16Ghz, Npn Single Cph6 / Reel
***(Formerly Allied Electronics)
ON Semi CPH6003A-TL-E NPN RF Bipolar Transistor; 0.15 A; 12 V; 6-Pin CPH
***r Electronics
RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, NPN
***ark
Transistor, Rf, Npn, 12V, 0.15A, Sot-457 Rohs Compliant: Yes
***emi
RF Transistor, 12 V, 150 mA, fT = 7 GHz
***et
Trans GP BJT NPN 12V 0.15A 6-Pin CPH T/R
***nell
TRANSISTOR, RF, NPN, 12V, 0.15A, SOT-457; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 7GHz; Power Dissipation Pd: 800mW; DC Collector Current: 150mA; DC Current Gain hFE: 100hFE; RF Transistor Case: SOT-457; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
*** Source Electronics
Trans GP BJT NPN/PNP 30V 0.5A 700mW 6-Pin TSOT-23 T/R / TRANS NPN/PNP 30V 0.5A 6SSOT
*** Electronics
FAIRCHILD SEMICONDUCTOR FMB2227A. BIPOLAR TRANSISTOR, NPN & PNP 30V SSOT-6
***r Electronics
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***ure Electronics
NPN/PNP 500 mW 30 V 500 mA Surface Mount General Purpose Transistor - SSOT-6
***emi
NPN & PNP Complementary Dual Transistor
***ark
Bipolar Transistor; Transistor Polarity:NPN & PNP; Power Dissipation, Pd:0.7W; DC Current Gain Min (hfe):30; Package/Case:SuperSOT-6; C-E Breakdown Voltage:40V; DC Collector Current:500A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
***rchild Semiconductor
This complementary device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19 and 63. See FFB2222A (NPN) and FFB2907A (PNP) for characteristics.
***ow.cn
Trans GP BJT NPN/PNP 40V 0.2A 700mW 6-Pin TSOT-23 T/R
***ure Electronics
NPN/PNP 40 V 200 mA 700 mW SMT General Purpose Amplifier - SSOT-6
*** Stop Electro
RF Small Signal Bipolar Transistor, 0.2A I(C), 2-Element, Silicon, NPN and PNP
***emi
NPN & PNP General Purpose Amplifier
***nell
TRANS, NPN/PNP, 40V, 0.2A, SUPERSOT; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 40V; Power Dissipation Pd: 700mW; DC Collector Current: 200mA; DC Current Gain hFE: 30hFE; Transistor Case Style: SuperSOT
***ark
Bipolar Transistor; Transistor Polarity:NPN & PNP; Power Dissipation, Pd:0.7W; DC Current Gain Min (hfe):30; Package/Case:SuperSOT-6; C-E Breakdown Voltage:40V; DC Collector Current:200A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
***rchild Semiconductor
This complementary device is designed for use as a general-purpose amplifier and switch, The useful dynamic range extends to 100 mA as a switch and 100 MHz as an amplifier. Sourced from Process 23 and 66. See FFB3904 (NPN) and FFB3906 (PNP) for characteristics.
***(Formerly Allied Electronics)
DMG204B00R Dual NPN+PNP Bipolar Transistor; 0.1 A; 0.5 A; 10V; 50V; 6-Pin Mini6 G4 B
***er Electronics
SC,COMPOSITE TRANSISTOR / PNP + NPN DUAL, LOW VCE(SAT), VCEO:-10V/50V, IC:-500MA/100MA
***el Electronic
Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm
***roFlash
Sc, Composite Transistor / PNP + NPN Dual, Low Vce(sat), Vceo: -10V/20V, IC: -500MA/500MA
***el Electronic
Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm
***(Formerly Allied Electronics)
Transistor NPN + PNP Mini6-G4-B
***p One Stop Global
Trans GP BJT NPN 30V 1A 1250mW 6-Pin TSMT T/R
***i-Key
TRANS DUAL NPN 30V 1A 6TSMT
型號 製造商 描述 庫存 價格
CPH6020-TL-E
DISTI # CPH6020-TL-E-ND		ON SemiconductorRF TRANS NPN 8V 16GHZ 6CPH
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.1953
CPH6020-TL-E
DISTI # CPH6020-TL-E		ON SemiconductorTrans GP BJT NPN 8V 0.15A 6-Pin CPH T/R - Tape and Reel (Alt: CPH6020-TL-E)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1559
  • 6000:$0.1549
  • 12000:$0.1529
  • 18000:$0.1509
  • 30000:$0.1479
CPH6020-TL-E
DISTI # 65T1170		ON SemiconductorBIP NPN 0.15A 8V FT=16G / REEL0
  • 1:$0.2400
CPH6020-TL-E
DISTI # 863-CPH6020-TL-E		ON SemiconductorBipolar Transistors - BJT BIP NPN 0.15A 8V FT=16G
RoHS: Compliant		2969
  • 1:$0.5400
  • 10:$0.4500
  • 100:$0.2800
  • 1000:$0.2200
  • 3000:$0.1800
  • 9000:$0.1700
  • 24000:$0.1600
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Mfr.#: RCLAMP3354S.TCT

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Mfr.#: TSX9292IQ2T

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SI8622BB-B-IS

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OMO.#: OMO-SI8622BB-B-IS-SILICON-LABS

 DGTL ISO 2.5KV 2CH GEN PUR 8SOIC
可用性
庫存:
Available
訂購:
1985
輸入數量:
CPH6020-TL-E的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$0.54
US$0.54
10
US$0.45
US$4.50
100
US$0.28
US$28.00
1000
US$0.22
US$220.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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