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IRF3805PBF

IRF3805PBF
Mfr. #:
IRF3805PBF
製造商:
Infineon / IR
描述:
MOSFET MOSFT 55V 220A 3.3mOhm 190nC
生命週期:
製造商新產品
數據表:
IRF3805PBF 數據表
交貨:
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支付:
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HTML Datasheet:
IRF3805PBF DatasheetIRF3805PBF Datasheet (P4-P6)IRF3805PBF Datasheet (P7-P9)IRF3805PBF Datasheet (P10-P12)
ECAD Model:
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
55 V
Id - 連續漏極電流：
220 A
Rds On - 漏源電阻：
3.3 mOhms
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
190 nC
Pd - 功耗：
130 W
配置：
單身的
打包：
管子
高度：
15.65 mm
長度：
10 mm
晶體管類型：
1 N-Channel
寬度：
4.4 mm
品牌：
英飛凌/紅外
產品類別：
MOSFET
出廠包裝數量：
1000
子類別：
MOSFET
第 # 部分別名：
SP001561690
單位重量：
0.211644 oz
Tags
IRF3805, IRF38, IRF3, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 55 V 3.3 mOhm 190 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***(Formerly Allied Electronics)
MOSFET, 55V, 220A, 3.3 MOHM, 190 NC QG,TO-220AB
***ow.cn
Trans MOSFET N-CH Si 55V 210A 3-Pin(3+Tab) TO-220AB Tube
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:210A; On Resistance Rds(On):0.0026Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***emi
N-Channel PowerTrench® MOSFET 60V, 80A, 3.8mΩ
***ure Electronics
N-Channel 60 V 3.8 mOhm PowerTrench Mosfet TO-220AB
***et Europe
Trans MOSFET N-CH 60V 17A 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 17A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):3.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:310W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220AB; Power Dissipation Pd:310W; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ical
Trans MOSFET N-CH 40V 23A Automotive 3-Pin(3+Tab) TO-220AB Rail
***emi
N-Channel PowerTrench® MOSFET 40V, 80A, 2.7mΩ
***ure Electronics
N-Channel 40 V 2.7 mOhm PowerTrench® Mosfet - TO-220
***r Electronics
Power Field-Effect Transistor, 23A I(D), 40V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:80A; On Resistance, Rds(on):0.0047ohm; Rds(on) Test Voltage, Vgs:2.8V; Threshold Voltage, Vgs Typ:20V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:300W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Capacitance Ciss Typ:15000pF; Current Id Max:80A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:0.5°C/W; On State Resistance Max:4.7mohm; On State Resistance Typ:3.6mohm; Package / Case:TO-220; Pin Configuration:G(1),D(2)S(3); Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 1.8Milliohms;ID 280A;TO-220AB;PD 330W;-55de
***eco
Transistor MOSFET N Channel 40 Volt 280.6 Amp 3 Pin 3+ Tab TO-220
*** Source Electronics
Trans MOSFET N-CH Si 40V 270A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 40V 75A TO-220AB
***klin Elektronik
INFINEON THT MOSFET NFET 40V 75A 2,3mΩ 175°C TO-220 IRF2804PBF
***ure Electronics
Single N-Channel 40 V 2.3 mOhm 240 nC HEXFET® Power Mosfet - TO-220-3
***ernational Rectifier
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 300 W
*** Stop Electro
Power Field-Effect Transistor, 75A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC; Consumer Full-Bridge; Full-Bridge; Push-Pull
***ark
N CHANNEL MOSFET, 40V, 270A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:270A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 40V, 280A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:280A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:270A; Device Marking:IRF2804PBF; Junction to Case Thermal Resistance A:0.45°C/W; On State resistance @ Vgs = 10V:2.3ohm; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:1080A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 3.9Milliohms;ID 175A;TO-220AB;PD 330W;-55de
*** Source Electronics
Trans MOSFET N-CH Si 55V 75A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 55V 75A TO-220AB
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 55 V 4.7 mOhm 230 nC HEXFET® Power Mosfet - TO-220-3
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 330 W
***el Electronic
Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 55V, 175A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:175A; Drain Source Voltage Vds:55V; On Resistance Rds(on):4.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:0.45°C/W; On State resistance @ Vgs = 10V:4.7ohm; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:700A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ler Electronic
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 55 V 4.9 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
***p One Stop
Trans MOSFET N-CH Si 55V 150A 3-Pin(3+Tab) TO-220AB Tube
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***ment14 APAC
MOSFET, N, 55V, 150A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:55V; On Resistance Rds(on):4.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:0.65°C/W; On State resistance @ Vgs = 10V:4.9ohm; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230W; Pulse Current Idm:600A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 150 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 4.9 / Gate-Source Voltage V = 20 / Fall Time ns = 82 / Rise Time ns = 110 / Turn-OFF Delay Time ns = 48 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 230
***C
MOSFET N-CH 55V 75A TO-220AB MOSFET N-CH 55V 75A TO-220AB MOSFET N-CH 55V 75A TO-220AB
***ure Electronics
N-Channel 55 V 0.007 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB
***emi
N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ
***r Electronics
Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:215W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:7mohm; Package / Case:TO-220AB; Power Dissipation Pd:215W; Power Dissipation Pd:215W; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
型號 製造商 描述 庫存 價格
IRF3805PBF
DISTI # 29534081		Infineon Technologies AGTrans MOSFET N-CH Si 55V 210A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		10201
  • 100:$1.1424
  • 10:$1.8144
IRF3805PBF
DISTI # IRF3805PBF-ND		Infineon Technologies AGMOSFET N-CH 55V 75A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		131In Stock
  • 1000:$1.9173
  • 500:$2.2734
  • 100:$2.8075
  • 10:$3.4240
  • 1:$3.8300
IRF3805PBF
DISTI # C1S322000519969		Infineon Technologies AGTrans MOSFET N-CH Si 55V 210A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		10201
  • 1000:$1.3600
  • 500:$1.4700
  • 100:$1.9200
  • 50:$2.0900
  • 10:$2.5400
  • 1:$3.9200
IRF3805PBF
DISTI # IRF3805PBF		Infineon Technologies AGTrans MOSFET N-CH 55V 210A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF3805PBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 505
  • 1:$1.9900
  • 10:$1.8900
  • 25:$1.8900
  • 50:$1.8900
  • 100:$1.1900
  • 500:$1.1900
  • 1000:$1.1900
IRF3805PBF
DISTI # 91Y4729		Infineon Technologies AGMOSFET, N-CH, 55V, 210A, TO-220AB-3,Transistor Polarity:N Channel,Continuous Drain Current Id:210A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.0026ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes967
  • 1:$3.3000
  • 10:$2.8100
  • 25:$2.6800
  • 50:$2.5600
  • 100:$2.4300
  • 250:$2.3100
  • 500:$2.0700
IRF3805PBF.
DISTI # 26AC0585		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:210A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.0026ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:300W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 1:$3.3000
  • 10:$2.8100
  • 25:$2.6800
  • 50:$2.5600
  • 100:$2.4300
  • 250:$2.3100
  • 500:$2.0700
IRF3805PBF
DISTI # 70018216		Infineon Technologies AGIRF3805PBF N-channel MOSFET Module,210A,55 V,3-Pin TO-220AB
RoHS: Compliant		0
  • 5:$4.7600
IRF3805PBF
DISTI # 942-IRF3805PBF		Infineon Technologies AGMOSFET MOSFT 55V 220A 3.3mOhm 190nC
RoHS: Compliant		1393
  • 1:$3.2900
  • 10:$2.8000
  • 100:$2.4200
  • 250:$2.3000
  • 500:$2.0600
IRF3805PBFInternational Rectifier 15
    IRF3805PBFInternational Rectifier 95
    • 2:$2.6880
    • 11:$1.7472
    • 30:$1.3440
    IRF3805PBFInternational RectifierMOSFET Transistor, N-Channel, TO-220AB76
    • 11:$1.8000
    • 4:$2.4000
    • 1:$3.6000
    IRF3805PBF
    DISTI # IRF3805PBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,55V,220A,130W,TO220AB93
    • 1:$2.3500
    • 3:$2.1300
    • 10:$1.7600
    • 100:$1.5500
    IRF3805PBF
    DISTI # 2579974    		Infineon Technologies AGMOSFET, N-CH, 55V, 210A, TO-220AB-3
    RoHS: Compliant    		967
    • 1:£3.1500
    • 10:£2.1500
    • 100:£1.8500
    • 250:£1.7600
    • 500:£1.5800
    IRF3805PBF
    DISTI # 2579974    		Infineon Technologies AGMOSFET, N-CH, 55V, 210A, TO-220AB-3
    RoHS: Compliant    		967
    • 1:$5.2100
    • 10:$4.4400
    • 100:$3.8400
    • 250:$3.6500
    • 500:$3.2600
    • 1000:$2.7600
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    可用性
    庫存:
    Available
    訂購:
    1985
    輸入數量:
    IRF3805PBF的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$3.29
    US$3.29
    10
    US$2.80
    US$28.00
    100
    US$2.42
    US$242.00
    250
    US$2.30
    US$575.00
    500
    US$2.06
    US$1 030.00
    從...開始
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