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SIR186DP-T1-RE3

SIR186DP-T1-RE3
Mfr. #:
SIR186DP-T1-RE3
製造商:
Vishay / Siliconix
描述:
MOSFET 60V Vds 20V Vgs PowerPAK SO-8
生命週期:
製造商新產品
數據表:
SIR186DP-T1-RE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
SIR186DP-T1-RE3 DatasheetSIR186DP-T1-RE3 Datasheet (P4-P6)SIR186DP-T1-RE3 Datasheet (P7-P9)SIR186DP-T1-RE3 Datasheet (P10-P12)SIR186DP-T1-RE3 Datasheet (P13)
ECAD Model:
更多信息:
SIR186DP-T1-RE3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
PowerPAK-SO-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
60 V
Id - 連續漏極電流：
60 A
Rds On - 漏源電阻：
3.7 mOhms
Vgs th - 柵源閾值電壓：
3.6 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
24.5 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
57 W
配置：
單身的
商品名：
TrenchFET、PowerPAK
打包：
捲軸
系列：
先生
品牌：
威世 / Siliconix
秋季時間：
9 ns
產品類別：
MOSFET
上升時間：
22 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
14 ns
典型的開啟延遲時間：
10 ns
Tags
SIR18, SIR1, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
TrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 60A ID 8-Pin PowerPAK SOIC T/R
***ical
Trans MOSFET N-CH 60V 23A 8-Pin PowerPAK SO EP T/R
***i-Key
MOSFET N-CH 60V 60A POWERPAKSO-8
***ark
Mosfet, N-Ch, 60V, 0.06A, Powerpak So; Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0037Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.6V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 0.06A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.6V; Power Dissipation Pd:57W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)
***nell
MOSFET, CA-N, 60V, 0,06A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:60A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0037ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.6V; Dissipazione di Potenza Pd:57W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
型號 製造商 描述 庫存 價格
SIR186DP-T1-RE3
DISTI # V99:2348_22521044		Vishay IntertechnologiesN-Channel 60 V (D-S) MOSFET0
  • 3000000:$0.5343
  • 600000:$0.5350
  • 60000:$0.5357
  • 6000:$0.5358
SIR186DP-T1-RE3
DISTI # SIR186DP-T1-RE3TR-ND		Vishay SiliconixMOSFET N-CH 60V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 15000:$0.4899
  • 6000:$0.5090
  • 3000:$0.5358
SIR186DP-T1-RE3
DISTI # SIR186DP-T1-RE3CT-ND		Vishay SiliconixMOSFET N-CH 60V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.5913
  • 500:$0.7490
  • 100:$0.9067
  • 10:$1.1630
  • 1:$1.3000
SIR186DP-T1-RE3
DISTI # SIR186DP-T1-RE3DKR-ND		Vishay SiliconixMOSFET N-CH 60V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.5913
  • 500:$0.7490
  • 100:$0.9067
  • 10:$1.1630
  • 1:$1.3000
SIR186DP-T1-RE3
DISTI # SIR186DP-T1-RE3		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 60A ID 8-Pin PowerPAK SOIC T/R (Alt: SIR186DP-T1-RE3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 1000:€0.4869
  • 500:€0.4929
  • 100:€0.5019
  • 50:€0.5089
  • 25:€0.5759
  • 10:€0.7099
  • 1:€0.9899
SIR186DP-T1-RE3
DISTI # SIR186DP-T1-RE3		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 60A ID 8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIR186DP-T1-RE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.4669
  • 30000:$0.4799
  • 18000:$0.4929
  • 12000:$0.5139
  • 6000:$0.5299
SIR186DP-T1-RE3
DISTI # 37AC0918		Vishay IntertechnologiesMOSFET, N-CH, 60V, 0.06A, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0037ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.6V,Power RoHS Compliant: Yes0
  • 500:$0.7000
  • 250:$0.7570
  • 100:$0.8140
  • 50:$0.8960
  • 25:$0.9780
  • 10:$1.0600
  • 1:$1.2900
SIR186DP-T1-RE3
DISTI # 59AC7438		Vishay IntertechnologiesN-CHANNEL 60-V (D-S) MOSFET0
  • 10000:$0.4630
  • 6000:$0.4740
  • 4000:$0.4920
  • 2000:$0.5470
  • 1000:$0.6020
  • 1:$0.6270
SIR186DP-T1-RE3
DISTI # 78-SIR186DP-T1-RE3		Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		0
  • 1:$1.2700
  • 10:$1.0400
  • 100:$0.8050
  • 500:$0.6920
  • 1000:$0.5460
  • 3000:$0.5100
SIR186DP-T1-RE3
DISTI # 2785448		Vishay IntertechnologiesMOSFET, N-CH, 60V, 0.06A, POWERPAK SO
RoHS: Compliant		0
  • 5000:$0.7840
  • 1000:$0.8120
  • 500:$0.8580
  • 250:$1.0100
  • 100:$1.2300
  • 25:$1.5700
  • 5:$1.8900
SIR186DP-T1-RE3
DISTI # 2785448		Vishay IntertechnologiesMOSFET, N-CH, 60V, 0.06A, POWERPAK SO0
  • 500:£0.5340
  • 250:£0.5780
  • 100:£0.6210
  • 10:£0.8660
  • 1:£1.1200
圖片 型號 描述
INA138NA/250

Mfr.#: INA138NA/250

OMO.#: OMO-INA138NA-250

 Current & Power Monitors & Regulators Hi-Sd Msmnt Current Shunt Mntr Crnt Otp
LTC4359IMS8#PBF

Mfr.#: LTC4359IMS8#PBF

OMO.#: OMO-LTC4359IMS8-PBF

 Power Management Specialized - PMIC Ideal Diode Cntr w/ Reverse In Prot
USBLC6-2SC6

Mfr.#: USBLC6-2SC6

OMO.#: OMO-USBLC6-2SC6

 TVS Diodes / ESD Suppressors ESD Protection Low Cap
BAT54XV2T1G

Mfr.#: BAT54XV2T1G

OMO.#: OMO-BAT54XV2T1G

 Schottky Diodes & Rectifiers 30V 200mW Single
BAT54HT1G

Mfr.#: BAT54HT1G

OMO.#: OMO-BAT54HT1G

 Schottky Diodes & Rectifiers 30V 200mW Single
INA138NA/250

Mfr.#: INA138NA/250

OMO.#: OMO-INA138NA-250-TEXAS-INSTRUMENTS

 Current & Power Monitors & Regulators Hi-Sd Msmnt Current Shunt Mntr Crnt Otp
0603YC105KAT2A

Mfr.#: 0603YC105KAT2A

OMO.#: OMO-0603YC105KAT2A-AVX

 Multilayer Ceramic Capacitors MLCC - Cap Ceramic 1uF 16V X7R 10% SMD 0603 125°C Paper T/R
USBLC6-2SC6

Mfr.#: USBLC6-2SC6

OMO.#: OMO-USBLC6-2SC6-STMICROELECTRONICS

 TVS DIODE 5.25V 17V SOT23-6
C1608X5R1A106K080AC

Mfr.#: C1608X5R1A106K080AC

OMO.#: OMO-C1608X5R1A106K080AC-TDK

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 10uF 10% 10Volts
BAT54HT1G

Mfr.#: BAT54HT1G

OMO.#: OMO-BAT54HT1G-ON-SEMICONDUCTOR

 Schottky Diodes & Rectifiers 30V 200mW Single
可用性
庫存:
Available
訂購:
5000
輸入數量:
SIR186DP-T1-RE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.27
US$1.27
10
US$1.04
US$10.40
100
US$0.80
US$80.50
500
US$0.69
US$346.00
1000
US$0.55
US$546.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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