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SIDR626DP-T1-GE3

SIDR626DP-T1-GE3
Mfr. #:
SIDR626DP-T1-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 60V Vds 20V Vgs PowerPAK SO-8DC
生命週期:
製造商新產品
數據表:
SIDR626DP-T1-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
SIDR626DP-T1-GE3 DatasheetSIDR626DP-T1-GE3 Datasheet (P4-P6)SIDR626DP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
更多信息:
SIDR626DP-T1-GE3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
PowerPAK-SO-8DC-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
60 V
Id - 連續漏極電流：
100 A
Rds On - 漏源電阻：
1.7 mOhms
Vgs th - 柵源閾值電壓：
2 V
Vgs - 柵源電壓：
10 V
Qg - 門電荷：
68 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
125 W
配置：
單身的
頻道模式：
增強
商品名：
溝槽場效應晶體管
打包：
捲軸
系列：
標準識別碼
晶體管類型：
1 N-Channel
品牌：
威世 / Siliconix
正向跨導 - 最小值：
78 S
秋季時間：
11 ns
產品類別：
MOSFET
上升時間：
24 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
30 ns
典型的開啟延遲時間：
16 ns
Tags
SIDR62, SIDR6, SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
型號 製造商 描述 庫存 價格
SIDR626DP-T1-GE3
DISTI # V72:2272_21764850		Vishay IntertechnologiesSIDR626DP-T1-GE32884
  • 75000:$1.2210
  • 30000:$1.2250
  • 15000:$1.2300
  • 6000:$1.2340
  • 3000:$1.2389
  • 1000:$1.4620
  • 500:$1.5750
  • 250:$1.6400
  • 100:$1.8220
  • 50:$1.9070
  • 25:$2.1189
  • 10:$2.3540
  • 1:$3.1064
SIDR626DP-T1-GE3
DISTI # SIDR626DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CHAN 60V
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5659In Stock
  • 1000:$1.4396
  • 500:$1.7374
  • 100:$2.1147
  • 10:$2.6310
  • 1:$2.9300
SIDR626DP-T1-GE3
DISTI # SIDR626DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CHAN 60V
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5659In Stock
  • 1000:$1.4396
  • 500:$1.7374
  • 100:$2.1147
  • 10:$2.6310
  • 1:$2.9300
SIDR626DP-T1-GE3
DISTI # SIDR626DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CHAN 60V
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 6000:$1.2852
  • 3000:$1.3013
SIDR626DP-T1-GE3
DISTI # 31012431		Vishay IntertechnologiesSIDR626DP-T1-GE32884
  • 1000:$1.3280
  • 500:$1.5750
  • 250:$1.6400
  • 100:$1.8220
  • 50:$1.9070
  • 25:$2.1189
  • 10:$2.3540
  • 6:$3.1064
SIDR626DP-T1-GE3
DISTI # SIDR626DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 60V 100A 8-Pin PowerPAK SO - Tape and Reel (Alt: SIDR626DP-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$1.0900
  • 12000:$1.1900
  • 18000:$1.1900
  • 30000:$1.1900
  • 6000:$1.2900
SIDR626DP-T1-GE3
DISTI # 59AC7338		Vishay IntertechnologiesN-CHANNEL 60-V (D-S) MOSFET0
  • 10000:$1.1500
  • 6000:$1.2000
  • 4000:$1.2400
  • 2000:$1.3800
  • 1000:$1.4500
  • 1:$1.5500
SIDR626DP-T1-GE3
DISTI # 78AC6503		Vishay IntertechnologiesMOSFET, N-CH, 60V, 100A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.4V,Power RoHS Compliant: Yes5840
  • 500:$1.6200
  • 250:$1.7300
  • 100:$1.8500
  • 50:$2.0300
  • 25:$2.2100
  • 10:$2.3900
  • 1:$2.8800
SIDR626DP-T1-GE3
DISTI # 78-SIDR626DP-T1-GE3		Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs PowerPAK SO-8DC
RoHS: Compliant		5635
  • 1:$2.8500
  • 10:$2.3700
  • 100:$1.8300
  • 500:$1.6000
  • 1000:$1.3300
  • 3000:$1.2400
  • 6000:$1.1900
SIDR626DP-T1-GE3
DISTI # 2932898		Vishay IntertechnologiesMOSFET, N-CH, 60V, 100A, 150DEG C, 125W
RoHS: Compliant		5840
  • 1000:$2.7900
  • 500:$2.9400
  • 250:$3.1300
  • 100:$3.4100
  • 10:$3.9300
  • 1:$4.5100
SIDR626DP-T1-GE3
DISTI # 2932898		Vishay IntertechnologiesMOSFET, N-CH, 60V, 100A, 150DEG C, 125W5840
  • 500:£1.2500
  • 250:£1.2900
  • 100:£1.3400
  • 10:£1.7400
  • 1:£2.3600
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OMO.#: OMO-DRV8703-Q1EVM

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OMO.#: OMO-MSP-EXP430FR2433

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Mfr.#: LAUNCHXL-F280049C

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Mfr.#: MSP-EXP430FR2433

OMO.#: OMO-MSP-EXP430FR2433-TEXAS-INSTRUMENTS

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LAUNCHXL-F280049C

Mfr.#: LAUNCHXL-F280049C

OMO.#: OMO-LAUNCHXL-F280049C-TEXAS-INSTRUMENTS

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OMO.#: OMO-R12P22005D-RECOM-POWER

 2 Watt DC to DC Converte
可用性
庫存:
Available
訂購:
1988
輸入數量:
SIDR626DP-T1-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$2.85
US$2.85
10
US$2.37
US$23.70
100
US$1.83
US$183.00
500
US$1.60
US$800.00
1000
US$1.33
US$1 330.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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