SCT2750NYTB

SCT2750NYTB
Mfr. #:
SCT2750NYTB
製造商:
Rohm Semiconductor
描述:
1700V .75 OHM 6A SIC FET
生命週期:
製造商新產品
數據表:
SCT2750NYTB 數據表
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ECAD Model:
更多信息:
SCT2750NYTB 更多信息
產品屬性
屬性值
Tags
SCT2, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 1700 V 0.75 Ohm Surface Mount SiC Power Mosfet - TO-268-2
***et
MOSFET, Power, N-Channel, SiC, 1700Vdc, 0.75 Ohm, 6A, TO-268-2l Pkg (15.95x13.9x5.0mm), 13T&R 800"
***ical
Trans MOSFET N-CH SiC 1.7KV 5.9A 3-Pin(2+Tab) TO-268L T/R
***Components
MOSFET N-CH 1700V 6A SIC TO-268-2L
***ronik
SiC-N 1700V 750mOhm 6A TO268
***ark
1700V, .75 OHM 6A SIC FET
***i-Key
1700V .75 OHM 6A SIC FET
***
N-CH SIC PWR MOSF 1.7KV
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 1.7KV, 6A, TO-268; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:1.7kV; On Resistance Rds(on):0.75ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:57W; Transistor Case Style:TO-268; No. of Pins:2Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, CA-N, 1,7KV, 6A, TO-268; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6A; Tensione Drain Source Vds:1.7kV; Resistenza di Attivazione Rds(on):0.75ohm; Tensione Vgs di Misura Rds(on):18V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:57W; Modello Case Transistor:TO-268; No. di Pin:2Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
Industrial Product Solutions
ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.
Electronic Vehicle (EV) Solutions
ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to contribute to efficiency and improved performance in of state-of-the-art Electronic Vehicles (EV). ROHM offers products optimized for a variety of solutions, with focus on Dedicated EV Blocks, such as the Main Inverter, DC-DC Converter, On-board Charger, and Electric Compressor.
型號 製造商 描述 庫存 價格
SCT2750NYTB
DISTI # 33952740
ROHM Semiconductor0800
  • 4:$7.1375
SCT2750NYTB
DISTI # SCT2750NYTBCT-ND
ROHM Semiconductor1700V .75 OHM 6A SIC FET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1783In Stock
  • 100:$4.6798
  • 25:$5.3996
  • 10:$5.7120
  • 1:$6.3600
SCT2750NYTB
DISTI # SCT2750NYTBDKR-ND
ROHM Semiconductor1700V .75 OHM 6A SIC FET
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1783In Stock
  • 100:$4.6798
  • 25:$5.3996
  • 10:$5.7120
  • 1:$6.3600
SCT2750NYTB
DISTI # SCT2750NYTBTR-ND
ROHM Semiconductor1700V .75 OHM 6A SIC FET
RoHS: Compliant
Min Qty: 400
Container: Tape & Reel (TR)
1600In Stock
  • 2000:$3.0989
  • 1200:$3.2620
  • 800:$3.8678
  • 400:$4.3105
SCT2750NYTB
DISTI # C1S625901693423
ROHM SemiconductorMOSFETs800
  • 500:$3.0100
  • 200:$3.4200
  • 50:$3.6500
  • 10:$4.8600
  • 1:$5.7100
SCT2750NYTB
DISTI # SCT2750NYTB
ROHM SemiconductorMOSFET, Power, N-Channel, SiC, 1700Vdc, 0.75 Ohm,6A, TO-268-2l Pkg (15.95x13.9x5.0mm), 13"T&R 800 - Tape and Reel (Alt: SCT2750NYTB)
RoHS: Compliant
Min Qty: 800
Container: Reel
Americas - 800
    SCT2750NYTB
    DISTI # SCT2750NYTB
    ROHM SemiconductorMOSFET, Power, N-Channel, SiC, 1700Vdc, 0.75 Ohm,6A, TO-268-2l Pkg (15.95x13.9x5.0mm), 13"T&R 800 (Alt: SCT2750NYTB)
    RoHS: Compliant
    Min Qty: 800
    Container: Reel
    Europe - 0
    • 8000:€3.8900
    • 4800:€4.1900
    • 3200:€4.4900
    • 1600:€4.6900
    • 800:€4.8900
    SCT2750NYTB
    DISTI # 28AC1982
    ROHM SemiconductorMOSFET, N-CH, 1.7KV, 6A, TO-268,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:1.7kV,On Resistance Rds(on):0.75ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes786
    • 250:$4.3900
    • 100:$4.6200
    • 50:$4.8600
    • 25:$5.1600
    • 10:$5.3900
    • 1:$6.2200
    SCT2750NYTB
    DISTI # 755-SCT2750NYTB
    ROHM SemiconductorMOSFET N-Ch 1700V 6A 57W SiC Silicon Carbide
    RoHS: Compliant
    1384
    • 1:$6.1600
    • 10:$5.2400
    • 100:$4.5400
    • 250:$4.3100
    • 400:$3.8600
    • 800:$3.2600
    • 2400:$3.0900
    SCT2750NYTBROHM Semiconductor 1
    • 2:$8.0750
    • 1:$9.6900
    SCT2750NYTB
    DISTI # TMOS1871
    ROHM SemiconductorSiC-N 1700V 750mOhm 6A TO268
    RoHS: Compliant
    Stock DE - 800Stock HK - 0Stock US - 0
    • 800:$6.6400
    SCT2750NYTB
    DISTI # 2772413
    ROHM SemiconductorMOSFET, N-CH, 1.7KV, 6A, TO-268
    RoHS: Compliant
    782
    • 25:$8.1400
    • 10:$8.6100
    • 1:$9.5800
    SCT2750NYTBROHM SemiconductorMOSFET N-Ch 1700V 6A 57W SiC Silicon Carbide
    RoHS: Compliant
    Americas - 1600
      SCT2750NYTB
      DISTI # 2772413
      ROHM SemiconductorMOSFET, N-CH, 1.7KV, 6A, TO-268789
      • 100:£3.7300
      • 50:£3.8700
      • 10:£4.0000
      • 5:£4.7000
      • 1:£5.1800
      SCT2750NYTBROHM SemiconductorRoHS(ship within 1day)2
      • 1:$6.3700
      • 10:$4.7800
      • 50:$4.2100
      • 100:$3.6000
      • 500:$3.3400
      • 1000:$3.2300
      圖片 型號 描述
      SCT2750NYTB

      Mfr.#: SCT2750NYTB

      OMO.#: OMO-SCT2750NYTB

      MOSFET N-Ch 1700V 6A 57W SiC Silicon Carbide
      SCT2750NYTB

      Mfr.#: SCT2750NYTB

      OMO.#: OMO-SCT2750NYTB-ROHM-SEMI

      1700V .75 OHM 6A SIC FET
      SCT277-1

      Mfr.#: SCT277-1

      OMO.#: OMO-SCT277-1-1190

      全新原裝
      可用性
      庫存:
      Available
      訂購:
      3500
      輸入數量:
      SCT2750NYTB的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格(美元)
      數量
      單價
      小計金額
      1
      US$0.00
      US$0.00
      10
      US$0.00
      US$0.00
      100
      US$0.00
      US$0.00
      500
      US$0.00
      US$0.00
      1000
      US$0.00
      US$0.00
      由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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