MMBT2132T3G

Mfr. #:: MMBT2132T3G
製造商:: ON Semiconductor
描述:: TRANS NPN 30V 0.7A SC74-6
生命週期:: 製造商新產品
數據表:: MMBT2132T3G 數據表
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HTML Datasheet:: MMBT2132T3G Datasheet MMBT2132T3G Datasheet (P4)
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產品屬性
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Tags: MMBT2132, MMBT21, MMBT2, MMBT, MMB

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MMBT2132T3G 描述

***r Electronics: Small Signal Bipolar Transistor, 0.7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon

***emi: Bipolar Junction Transistor

***i-Key: TRANS NPN 30V 0.7A SC74-6

***et: Trans GP BJT NPN 30V 0.5A 3-Pin UMT T/R

***i-Key: TRANS NPN 30V 0.5A UMT3

***ical: Trans GP BJT NPN 30V 0.5A 200mW 3-Pin UMTF T/R

***ure Electronics: NPN Driver Transistor - Bipolar Transistor

***nell: TRANSISTOR, NPN, 30V, 0.5A, SOT-323FL; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 360MHz; Power Dissipation Pd: 200mW; DC Collector Current: 500mA; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-323FL; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***(Formerly Allied Electronics): ROHM 2SC4097T106R NPN Bipolar Transistor; 0.5 A; 32 V; 3-Pin UMT

*** Stop Electro: RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, NPN

***ure Electronics: 2SC4097 Series 32 V 0.5 A SMT NPN Medium Power Transistor - SC-70

***ical: Trans GP BJT NPN 32V 0.5A 200mW 3-Pin UMT T/R

***ment14 APAC: Transistor,NPN,32V,0.5A,SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:32V; Transition Frequency ft:250MHz; Power Dissipation Pd:200mW; DC Collector Current:500mA; DC Current Gain hFE:120hFE; Transistor Case Style:SC-70; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Gain Bandwidth ft Typ:250MHz

***ark: TRANSISTOR,NPN,32V,0.5A,SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage Max:32V; Continuous Collector Current:500mA; Power Dissipation:200mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

*** Source Electronics: Trans GP BJT NPN/PNP 30V 0.5A 6-Pin SC-70 T/R / TRANS NPN/PNP 30V 0.5A SC70-6

*** Stop Electro: Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 2-Element, NPN and PNP, Silicon

***emi: NPN & PNP General Purpose Amplifier

*** Electronics: FFB2227A NPN/PNP COMP GEN PURPOSE SC70-6 5V 0.5A 0 .3W

***ark: Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN & PNP; Collector Emitter Voltage, V(br)ceo:30V; Continuous Collector Current, Ic:0.5A; Collector Emitter Saturation Voltage, Vce(sat):1.4V; Power Dissipation, Pd:300mW

***rchild Semiconductor: This complementary device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19 and 63. See FFB2222A (NPN) and FFB2907A (PNP) for characteristics.

***ment14 APAC: Transistor, NPN/PNP, 30V, 0.5A, 0.3W, SC-70; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:30hFE; Transistor Case Style:SC-70; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***r Electronics: Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon

***ure Electronics: FEB2222 Series 40 V CE Breakdown 0.5 A NPN General Purpose Amplifier - SC-70-6

***ical: Trans GP BJT NPN 45V 0.5A 300mW 6-Pin SC-70 T/R

***rchild Semiconductor: This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.

***ark: Bipolar Transistor; Transistor Polarity:Dual NPN; Power Dissipation, Pd:0.3W; DC Current Gain Min (hfe):35; Package/Case:6-SC-70; C-E Breakdown Voltage:40V; DC Collector Current:500A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes

***ment14 APAC: Transistor, BIPOL, DUAL NPN, 40V, SC70-6; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:300hFE; Transistor Case Style:SC-70; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

***ure Electronics: Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V, 45V 200mA, 500mA 300MHz, 100MHz

***(Formerly Allied Electronics): ON Semi NSM4002MR6T1G Dual NPN Bipolar Transistor; 0.2 A; 0.5 A 40/45V; 6-Pin SC-74

***enic: 300mW 2 NPN -55¡Í~+150¡Í@(Tj) SC-74-6 Bipolar Transistors - BJT ROHS

*** Stop Electro: Small Signal Bipolar Transistor, 0.5A I(C), NPN

***ical: Trans GP BJT NPN 40V 0.2A/0.5A 300mW 6-Pin SC-74 T/R

***nell: DUAL NPN TRANSISTORS; Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 45V; Power Dissipation Pd: 500µW; DC Collector Current: 500mA; DC Current Gain hFE: 40hFE; Transistor Case Style: SC-74; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ark: Transistor, Bipol, Dual Npn, 45V, Sc74-6; Transistor Polarity:dual Npn; Collector Emitter Voltage Max Npn:45V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current Npn:500Ma; Continuous Collector Current Pnp:- Rohs Compliant: Yes

Market price

型號	製造商	描述	庫存	價格
MMBT2132T3G DISTI # MMBT2132T3GOS-ND	ON Semiconductor	TRANS NPN 30V 0.7A SC74-6 RoHS: Compliant Min Qty: 10000 Container: Tape & Reel (TR)	Limited Supply - Call
MMBT2132T3 DISTI # 863-MMBT2132T3	ON Semiconductor	Bipolar Transistors - BJT 700mA NPN RoHS: Not compliant	0
MMBT2132T3G	ON Semiconductor	Small Signal Bipolar Transistor, 0.7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon RoHS: Compliant	10000	500:$0.0800 1000:$0.0800 25:$0.0900 100:$0.0900 1:$0.1000

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