IKW40N65F5FKSA1

Mfr. #:: IKW40N65F5FKSA1
製造商:: Infineon Technologies
描述:: IGBT Transistors IGBT PRODUCTS
生命週期:: 製造商新產品
數據表:: IKW40N65F5FKSA1 數據表
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更多信息:: IKW40N65F5FKSA1 更多信息

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: IGBT - 單

系列: 戰壕止損

打包: 管子

部分別名: IKW40N65F5 SP000973418

單位重量: 1.340411 oz

安裝方式: 通孔

包裝盒: TO-247-3

輸入類型: 標準

安裝型: 通孔

供應商-設備-包: PG-TO247-3

配置: 單身的

最大功率: 255W

反向恢復時間trr: 60ns

電流收集器 Ic-Max: 74A

電壓收集器發射極擊穿最大值: 650V

IGBT型: -

電流收集器脈衝Icm: 120A

Vce-on-Max-Vge-Ic: 2.1V @ 15V, 40A

開關能源: 360μJ (on), 100μJ (off)

柵極電荷: 95nC

Td-on-off-25°C: 19ns/160ns

測試條件: 400V, 20A, 15 Ohm, 15V

鈀功耗: 255 W

最高工作溫度: + 175 C

最低工作溫度: - 40 C

集電極-發射極-電壓-VCEO-Max: 650 V

集電極-發射極-飽和-電壓: 1.6 V

25-C 時的連續集電極電流: 74 A

柵極-發射極-漏電流: 100 nA

最大柵極發射極電壓: 20 V

連續集電極電流 Ic-Max: 46 A

Tags: IKW40N65F, IKW40N65, IKW40N6, IKW40N, IKW4, IKW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IKW40N65F5FKSA1 描述

***ical: Trans IGBT Chip N=-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-247 Tube

***i-Key: IGBT 650V 74A 255W PG-TO247-3

***ronik: IGBT 650V 40A 1.6V TO247-3

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

IKW40N65F5FKSA1 更多信息

TRENCHSTOP™ 5 IGBTs: Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

TRENCHSTOP™ 5 F5 Discrete IGBTs: Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages and high voltage DC-DC topologies commonly found in applications like Uninterruptible Power Supplies, UPS, Inverterized Welding Machines and Switch Mode Power Supplies (SMPS). The 650V TRENCHSTOP™ 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP™ 5 H5 family. The F5 products require higher design in effort, but rewards are higher.

Market price

型號	製造商	描述	庫存	價格
IKW40N65F5FKSA1 DISTI # IKW40N65F5FKSA1-ND	Infineon Technologies AG	IGBT 650V 74A 255W PG-TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	240In Stock	1200:$2.8247 720:$3.2892 240:$3.8073 10:$4.5750 1:$5.0500
IKW40N65F5FKSA1 DISTI # IKW40N65F5FKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 74A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW40N65F5FKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	240:$2.3900 480:$2.2900 960:$2.1900 1440:$2.1900 2400:$2.0900
IKW40N65F5FKSA1 DISTI # SP000973418	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 74A 3-Pin TO-247 Tube (Alt: SP000973418) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€2.3900 10:€2.1900 25:€2.0900 50:€1.9900 100:€1.8900 500:€1.8900 1000:€1.6900
IKW40N65F5FKSA1 DISTI # 726-IKW40N65F5FKSA1	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS RoHS: Compliant	960	1:$4.5000 10:$3.8200 100:$3.3100 250:$3.1400 500:$2.8200
IKW40N65F5 DISTI # 726-IKW40N65F5-ES	Infineon Technologies AG	IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT RoHS: Compliant	0	240:$3.3100 480:$3.1400 720:$2.8200
IKW40N65F5FKSA1 DISTI # IKW40N65F5FKSA1	Infineon Technologies AG	Transistor: IGBT,650V,74A,250W,TO247-3,Series: F5	214	1:$4.0600 3:$3.5000 10:$2.8100 30:$2.5200
IKW40N65F5FKSA1 DISTI # IKW40N65F5	Infineon Technologies AG	650V 74A 255W TO247 RoHS: Compliant	240	1:€5.8600 10:€2.8600 50:€1.8600 100:€1.7900
IKW40N65F5FKSA1 DISTI # 2363293	Infineon Technologies AG	IGBT, 650V, 40A, TO247-3 RoHS: Compliant	6	1200:$3.9600 720:$4.7000 240:$5.5200 10:$6.7300 1:$7.4900
IKW40N65F5FKSA1 DISTI # 2363293	Infineon Technologies AG	IGBT, 650V, 40A, TO247-3 RoHS: Compliant	0	500:£2.3100 250:£2.3200 100:£2.3400 10:£2.6800 1:£3.1500

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