BSZ084N08NS5ATMA1

BSZ084N08NS5ATMA1
Mfr. #:
BSZ084N08NS5ATMA1
製造商:
Infineon Technologies
描述:
RF Bipolar Transistors MOSFET N-Ch 80V 40A TSDSON-8
生命週期:
製造商新產品
數據表:
BSZ084N08NS5ATMA1 數據表
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BSZ084N08NS5ATMA1 更多信息
產品屬性
屬性值
製造商
英飛凌科技
產品分類
晶體管 - FET、MOSFET - 單
打包
捲軸
部分別名
BSZ084N08NS5 SP001227056
安裝方式
貼片/貼片
包裝盒
TSDSON-8
技術
通道數
1 Channel
配置
單身的
晶體管型
1 N-Channel
鈀功耗
63 W
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
秋季時間
5 ns
上升時間
5 ns
VGS-柵極-源極-電壓
+/- 20 V
Id 連續漏極電流
40 A
Vds-漏-源-擊穿電壓
80 V
VGS-th-Gate-Source-Threshold-Voltage
2.2 V
Rds-On-Drain-Source-Resistance
11.9 mOhms
晶體管極性
N通道
典型關斷延遲時間
25 ns
典型開啟延遲時間
13 ns
Qg-門電荷
20 nC
正向跨導最小值
20 S
通道模式
增強
Tags
BSZ08, BSZ0, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R
***ark
Mosfet, N-Ch, 80V, 40A, Tsdson-8; Transistor Polarity:n Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0071Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
型號 製造商 描述 庫存 價格
BSZ084N08NS5ATMA1
DISTI # V72:2272_06384335
Infineon Technologies AGTrans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant
4617
  • 3000:$0.5386
  • 1000:$0.5472
  • 500:$0.6922
  • 250:$0.7714
  • 100:$0.7985
  • 25:$1.0169
  • 10:$1.0549
  • 1:$1.3723
BSZ084N08NS5ATMA1
DISTI # V36:1790_06384335
Infineon Technologies AGTrans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant
0
    BSZ084N08NS5ATMA1
    DISTI # BSZ084N08NS5ATMA1-ND
    Infineon Technologies AGMOSFET N-CH 80V 40A 8TSDSON
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 5000:$0.5624
    BSZ084N08NS5ATMA1
    DISTI # 32669677
    Infineon Technologies AGTrans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R
    RoHS: Compliant
    5000
    • 25000:$0.4722
    • 10000:$0.4881
    • 5000:$0.5069
    BSZ084N08NS5ATMA1
    DISTI # 31696288
    Infineon Technologies AGTrans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R
    RoHS: Compliant
    4617
    • 3000:$0.5386
    • 1000:$0.5472
    • 500:$0.6922
    • 250:$0.7714
    • 100:$0.7985
    • 25:$1.0253
    • 14:$1.0549
    BSZ084N08NS5ATMA1
    DISTI # BSZ084N08NS5ATMA1
    Infineon Technologies AGMOSFET N-CH 80V 40A 8TSDSON - Tape and Reel (Alt: BSZ084N08NS5ATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 50000:$0.4879
    • 30000:$0.4969
    • 20000:$0.5139
    • 10000:$0.5329
    • 5000:$0.5529
    BSZ084N08NS5ATMA1
    DISTI # BSZ084N08NS5
    Infineon Technologies AGMOSFET N-CH 80V 40A 8TSDSON (Alt: BSZ084N08NS5)
    RoHS: Compliant
    Min Qty: 5000
    Asia - 0
    • 250000:$0.4866
    • 125000:$0.4928
    • 50000:$0.4992
    • 25000:$0.5058
    • 15000:$0.5195
    • 10000:$0.5339
    • 5000:$0.5491
    BSZ084N08NS5ATMA1
    DISTI # SP001227056
    Infineon Technologies AGMOSFET N-CH 80V 40A 8TSDSON (Alt: SP001227056)
    RoHS: Compliant
    Min Qty: 5000
    Europe - 0
    • 50000:€0.4479
    • 30000:€0.4819
    • 20000:€0.5219
    • 10000:€0.5699
    • 5000:€0.6969
    BSZ084N08NS5ATMA1
    DISTI # 49AC0113
    Infineon Technologies AGMOSFET, N-CH, 80V, 40A, TSDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0071ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes1427
    • 1000:$0.5830
    • 500:$0.7380
    • 250:$0.7870
    • 100:$0.8350
    • 50:$0.9170
    • 25:$0.9990
    • 10:$1.0800
    • 1:$1.2700
    BSZ084N08NS5ATMA1
    DISTI # 726-BSZ084N08NS5ATMA
    Infineon Technologies AGMOSFET N-Ch 80V 40A TSDSON-8
    RoHS: Compliant
    14082
    • 1:$1.2600
    • 10:$1.0700
    • 100:$0.8270
    • 500:$0.7310
    • 1000:$0.5770
    • 5000:$0.5120
    • 10000:$0.4930
    BSZ084N08NS5ATMA1
    DISTI # 2839438
    Infineon Technologies AGMOSFET, N-CH, 80V, 40A, TSDSON-8
    RoHS: Compliant
    1427
    • 100:$1.1700
    • 25:$1.4300
    • 5:$1.6300
    BSZ084N08NS5ATMA1
    DISTI # 2839438
    Infineon Technologies AGMOSFET, N-CH, 80V, 40A, TSDSON-83412
    • 100:£0.7970
    • 25:£1.0300
    • 5:£1.1400
    圖片 型號 描述
    BSZ084N08NS5ATMA1

    Mfr.#: BSZ084N08NS5ATMA1

    OMO.#: OMO-BSZ084N08NS5ATMA1

    MOSFET N-Ch 80V 40A TSDSON-8
    BSZ084N08NS5ATMA1

    Mfr.#: BSZ084N08NS5ATMA1

    OMO.#: OMO-BSZ084N08NS5ATMA1-INFINEON-TECHNOLOGIES

    RF Bipolar Transistors MOSFET N-Ch 80V 40A TSDSON-8
    可用性
    庫存:
    Available
    訂購:
    5000
    輸入數量:
    BSZ084N08NS5ATMA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$0.71
    US$0.71
    10
    US$0.67
    US$6.73
    100
    US$0.64
    US$63.75
    500
    US$0.60
    US$301.05
    1000
    US$0.57
    US$566.60
    由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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