FQT3P20TF_SB82100

Mfr. #:: FQT3P20TF_SB82100
製造商:: Rochester Electronics, LLC
描述:: RF Bipolar Transistors MOSFET 250V 0.11OHM 25.5A MOSFET
生命週期:: 製造商新產品
數據表:: FQT3P20TF_SB82100 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

Tags: FQT3P20T, FQT3P, FQT3, FQT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FQT3P20TF_SB82100 描述

***i-Key: MOSFET P-CH 200V 0.67A SOT-223-4

***et: 250V, 0.11OHM, 25.5A, N-CH MOSFET

***or: 1-ELEMENT, P-CHANNEL POWER MOSFE

***emi: Power MOSFET, N-Channel, QFET®, 250 V, 0.83 A, 1.75 Ω, SOT-223

*** Source Electronics: Trans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 250V 0.83A SOT-223

***ure Electronics: N-Channel 250 V 1.75 Ohm Surface Mount Mosfet - SOT-223

***nell: MOSFET, N-CH, 250V, 0.83A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 830mA; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 1.38ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***p One Stop Global: Trans MOSFET P-CH 250V 0.55A 4-Pin(3+Tab) SOT-223 T/R

***emi: P-Channel QFET® MOSFET -250 V, -0.55 A, 4.0 Ω

***ure Electronics: 250V 0.55A 4OHM P-Channel SOT-223 Mosfet

***ark: Mosfet, P-Ch, -250V, -0.55A, Sot-223; Transistor Polarity:p Channel; Continuous Drain Current Id:-550Ma; Drain Source Voltage Vds:-250V; On Resistance Rds(On):3.15Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-5V; Power Rohs Compliant: Yes

***rchild Semiconductor: These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switching DC/DC converters.

***emi: Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 0.85 A, 1.4 Ω, SOT-223

***ure Electronics: N-Channel 200 V 1.35 Ohm 5.2 nC Logic Mosfet - SOT-223

***Yang: Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel

***ment14 APAC: MOSFET, N CH, 200V, 0.85A, SOT-223-3; Transistor Polarity:N Channel; Continuous Drain Current Id:850mA; Source Voltage Vds:200V; On Resistance

***nell: MOSFET, N CH, 200V, 0.85A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 850mA; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 1.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 2.2W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***ure Electronics: N-Channel 250 V 2 Ohm Power Mosfet Surface Mount - SOT-223-3

***ical: Trans MOSFET N-CH 250V 0.79A 4-Pin(3+Tab) SOT-223 T/R

***ark: N CH MOSFET, 250V, 790mA, SOT-223, FULL REEL

***ical: Trans MOSFET N-CH 240V 0.5A 4-Pin (3+Tab) SOT-223 T/R

***ure Electronics: N-Channel 240 V 5.5 Ohm Enhancement Mode Vertical DMOS FET - SOT-223

***nell: MOSFET, N CH, 240V, 0.5A, 2.5W; Transistor Polarity: N Channel; Continuous Drain Current Id: 500mA; Drain Source Voltage Vds: 240V; On Resistance Rds(on): 4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.3V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ure Electronics: ZVP4424G Series 240 V 9 Ohm P-Channel Enhancement Mode Vertical DMOS FET-SOT-223

***C: Trans MOSFET P-CH 240V 0.48A 4-Pin(3+Tab) SOT-223 T/R Trans MOSFET P-CH 240V 0.48A 4-Pin(3+Tab) SOT-223 T/R Trans MOSFET P-CH 240V 0.48A 4-Pin(3+Tab) SOT-223 T/R

***roFlash: Power Field-Effect Transistor, 0.48A I(D), 240V, 11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

***S: French Electronic Distributor since 1988

Market price

型號	製造商	描述	庫存	價格
FQT3P20TF-SB82100 DISTI # FQT3P20TF-SB82100CT-ND	ON Semiconductor	MOSFET P-CH 200V 0.67A SOT-223-4 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FQT3P20TF-SB82100 DISTI # FQT3P20TF-SB82100DKR-ND	ON Semiconductor	MOSFET P-CH 200V 0.67A SOT-223-4 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FQT3P20TF_SB82100 DISTI # FQT3P20TF_SB82100	ON Semiconductor	250V, 0.11OHM, 25.5A, N-CH MOSFET - Bulk (Alt: FQT3P20TF_SB82100) Min Qty: 962 Container: Bulk	Americas - 0	9620:$0.3199 4810:$0.3289 2886:$0.3329 1924:$0.3369 962:$0.3389
FQT3P20TF-SB82100 DISTI # 512-FQT3P20TFSB82100	ON Semiconductor	MOSFET 250V 0.11OHM 25.5A MOSFET RoHS: Compliant	0	1:$0.8400 10:$0.7170 100:$0.5510 500:$0.4870 1000:$0.3840 4000:$0.3410 8000:$0.3280 24000:$0.3180
FQT3P20TF_SB82100	Fairchild Semiconductor Corporation	RoHS: Not Compliant	176	1000:$0.3400 500:$0.3600 100:$0.3800 25:$0.3900 1:$0.4200
FQT3P20TF_SB82100	Fairchild Semiconductor Corporation	INSTOCK	4000

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