NUS5530MNR2G

Mfr. #:: NUS5530MNR2G
製造商:: ON Semiconductor
描述:: IGBT Transistors MOSFET INTEGRATED POWER BJT
生命週期:: 製造商新產品
數據表:: NUS5530MNR2G 數據表
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ECAD Model:

產品屬性
屬性值

製造商: 安森美半導體

產品分類: 晶體管 - 特殊用途

系列: NUS5530MN

打包: 切割膠帶 (CT) 替代包裝

單位重量: 0.001319 oz

安裝方式: 貼片/貼片

目前評級: 2A PNP, 3.9A P-Channel

包裝盒: 8-VDFN Exposed Pad

技術: 矽

安裝型: 表面貼裝

額定電壓: 35V PNP, 20V P-Channel

應用: 一般用途

供應商-設備-包: 8-DFN-EP (3.3x3.3)

晶體管型: NPN、P 溝道

鈀功耗: 635 mW

VGS-柵極-源極-電壓: - 35 V

Id 連續漏極電流: - 3.9 A

Vds-漏-源-擊穿電壓: - 20 V

Rds-On-Drain-Source-Resistance: 200 Ohms

晶體管極性: P-通道

正向跨導最小值: 12 S

Tags: NUS5, NUS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NUS5530MNR2G 描述

***ied Electronics & Automation: ON Semi NUS5530MNR2G Dual PNP Bipolar Transistor; 2 A; 35 V; 8-Pin DFN

***th Star Micro: NUS5530MN: Integrated Power MOSFET 20V 3.9A 60 mOhm Dual P-Channel with PNP Low VCE Switching Transistor DFN8

***ark: Transistor,mos-Bjt Power Module,independent,35V V(Br)Ceo,2A I(C)

***et: Integrated Power MOSFET with PNP 8-Pin DFN EP T/R

***ser: Transistors Bipolar- Bias Resistor INTEGRATED POWER BJT

***i-Key: IC MOSFET W/PNP SW TRANS 8-DFN

Market price

型號	製造商	描述	庫存	價格
NUS5530MNR2G DISTI # V36:1790_07283721	ON Semiconductor	Integrated Power MOSFET with PNP 8-Pin DFN EP T/R RoHS: Compliant	0
NUS5530MNR2G DISTI # NUS5530MNR2GOSTR-ND	ON Semiconductor	IC MOSFET W/PNP SW TRANS 8-DFN RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.6031
NUS5530MNR2G DISTI # NUS5530MNR2G	ON Semiconductor	Integrated Power MOSFET with PNP 8-Pin DFN EP T/R - Tape and Reel (Alt: NUS5530MNR2G) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4829 6000:$0.4799 12000:$0.4739 18000:$0.4679 30000:$0.4559
NUS5530MNR2G DISTI # NUS5530MNR2G	ON Semiconductor	Integrated Power MOSFET with PNP 8-Pin DFN EP T/R - Bulk (Alt: NUS5530MNR2G) RoHS: Compliant Min Qty: 610 Container: Bulk	Americas - 0	610:$0.5349 612:$0.5319 1222:$0.5249 3050:$0.5179 6100:$0.5059
NUS5530MNR2G DISTI # 70465550	ON Semiconductor	ON Semi NUS5530MNR2G Dual PNP Bipolar Transistor,2 A,35 V,8-Pin DFN RoHS: Compliant	0	20:$0.5300 50:$0.5200 100:$0.5100 500:$0.5000
NUS5530MNR2G DISTI # 863-NUS5530MNR2G	ON Semiconductor	MOSFET INTEGRATED POWER BJT RoHS: Compliant	0	3000:$0.4930 9000:$0.4740
NUS5530MNR2G	ON Semiconductor	Power Field-Effect Transistor, 3.9A I(D), 20V, 0.083ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	105255	1000:$0.5400 500:$0.5700 100:$0.5900 25:$0.6200 1:$0.6600
NUS5530MNR2G	ON Semiconductor		1780

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