2N7002V vs 2N7002V-7 vs 2N7002V-CUT TAPE

 
PartNumber2N7002V2N7002V-72N7002V-CUT TAPE
DescriptionMOSFET N-Chan Enhancement Mode Field EffectMOSFET 2N-CH 60V 0.28A SOT-563
ManufacturerON SemiconductorDiodes Incorporated-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-563F-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current280 mA--
Rds On Drain Source Resistance7.5 Ohms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation250 mW--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReelDigi-ReelR-
Height0.78 mm--
Length1.6 mm--
ProductMOSFET Small Signal--
Series2N7002V--
Transistor Type2 N-Channel--
Width0.88 mm--
BrandON Semiconductor / Fairchild--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time12.5 ns--
Typical Turn On Delay Time5.85 ns--
Unit Weight0.000071 oz--
Package Case-SOT-563, SOT-666-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-563-
FET Type-2 N-Channel (Dual)-
Power Max-150mW-
Drain to Source Voltage Vdss-60V-
Input Capacitance Ciss Vds-50pF @ 25V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-280mA-
Rds On Max Id Vgs-7.5 Ohm @ 50mA, 5V-
Vgs th Max Id-2.5V @ 250μA-
Gate Charge Qg Vgs---
Top