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| PartNumber | 2SA2126-H | 2SA2126 | 2SA2126-E |
| Description | Bipolar Transistors - BJT BIP PNP 3A 50V | Bipolar Transistors - BJT HIGH-CURRENT SWITCHING | |
| Manufacturer | ON Semiconductor | - | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | - | Transistors - Bipolar (BJT) - RF |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | - | SMD/SMT |
| Package / Case | TO-251-3 | - | - |
| Transistor Polarity | PNP | - | PNP |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Emitter Base Voltage VEBO | - 6 V | - | - |
| Series | 2SA2126 | - | 2SA2126 |
| Packaging | Bulk | - | Bulk |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 3 A | - | - 3 A |
| DC Collector/Base Gain hfe Min | 200 | - | - |
| Pd Power Dissipation | 800 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Configuration | - | - | Single |
| Pd Power Dissipation | - | - | 0.8 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Collector Emitter Voltage VCEO Max | - | - | - 50 V |
| Emitter Base Voltage VEBO | - | - | - 6 V |
| Gain Bandwidth Product fT | - | - | 390 MHz |
| DC Current Gain hFE Max | - | - | 560 |