2SC4614T-AN vs 2SC4614S-AN vs 2SC4614

 
PartNumber2SC4614T-AN2SC4614S-AN2SC4614
DescriptionBipolar Transistors - BJT BIP NPN 1.5A 160VBipolar Transistors - BJT BIP NPN 1.5A 160V
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors - Bipolar (BJT) - RF
RoHSYY-
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseNMP-3NMP-3-
Transistor PolarityNPNNPNNPN
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max- 160 V160 V-
Collector Base Voltage VCBO- 180 V180 V-
Emitter Base Voltage VEBO- 6 V6 V-
Collector Emitter Saturation Voltage- 200 mV0.13 V0.13 V
Maximum DC Collector Current- 1.5 A2.5 A2.5 A
Gain Bandwidth Product fT120 MHz120 MHz120 MHz
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Series2SC46142SC46142SC4614
DC Current Gain hFE Max400400400
PackagingReelReelReel
BrandON SemiconductorON Semiconductor-
Continuous Collector Current- 1.5 A1.5 A1.5 A
Pd Power Dissipation1 W1 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity25002500-
SubcategoryTransistorsTransistors-
Pd Power Dissipation--1 W
Collector Emitter Voltage VCEO Max--160 V
Collector Base Voltage VCBO--180 V
Emitter Base Voltage VEBO--6 V
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