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| PartNumber | 2SC5086-Y,LF | 2SC5086-Y(T5L,F,T) | 2SC5086-Y |
| Description | RF Bipolar Transistors Radio-Frequency Bipolar Transistor | RF Bipolar Transistors RF Device VHF/UHF 12V 100mW 11dB 7GHz | |
| Manufacturer | Toshiba | - | - |
| Product Category | RF Bipolar Transistors | - | - |
| RoHS | Y | - | - |
| Series | 2SC5086 | - | - |
| Technology | Si | - | - |
| Transistor Polarity | NPN | - | - |
| DC Collector/Base Gain hfe Min | 80 | - | - |
| Collector Emitter Voltage VCEO Max | 12 V | - | - |
| Emitter Base Voltage VEBO | 3 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Configuration | Single | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-75-3 | - | - |
| Packaging | Reel | - | - |
| Collector Base Voltage VCBO | 20 V | - | - |
| DC Current Gain hFE Max | 240 at 20 mA at 10 V | - | - |
| Brand | Toshiba | - | - |
| Gain Bandwidth Product fT | 7 GHz | - | - |
| Maximum DC Collector Current | 80 mA | - | - |
| Pd Power Dissipation | 100 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |