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| PartNumber | 2ST501T | 2ST5949 | 2ST50T3G |
| Description | Darlington Transistors PWR BIP/S.SIGNAL | Bipolar Transistors - BJT High PWR NPN planar bipolar trans | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | Darlington Transistors | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Configuration | Single | Single | - |
| Transistor Polarity | NPN | NPN | - |
| Collector Emitter Voltage VCEO Max | 350 V | 250 V | - |
| Emitter Base Voltage VEBO | 5 V | 6 V | - |
| Maximum Collector Cut off Current | 500 uA | - | - |
| Pd Power Dissipation | 100 W | 250000 mW | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-3 | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | 2ST501 | 2ST5949 | - |
| Packaging | Tube | Bulk | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Continuous Collector Current | 4 A | - | - |
| DC Collector/Base Gain hfe Min | 2000 | 80 at 1 A, 5 V, 35 at 7 A, 5 V | - |
| Product Type | Darlington Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1000 | 100 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.081130 oz | 0.225789 oz | - |
| Collector Base Voltage VCBO | - | 250 V | - |
| Maximum DC Collector Current | - | 17 A | - |
| Gain Bandwidth Product fT | - | 25 MHz | - |
| DC Current Gain hFE Max | - | 80 | - |
| Height | - | 8.7 mm | - |
| Length | - | 39.5 mm | - |
| Width | - | 26.2 mm | - |