ALD1101ASAL vs ALD1101APAL vs ALD1101PA

 
PartNumberALD1101ASALALD1101APALALD1101PA
DescriptionMOSFET Dual N-Channel PairMOSFET Dual N-Channel Pair
ManufacturerAdvanced Linear DevicesAdvanced Linear DevicesAdvanced Linear Devices Inc.
Product CategoryMOSFETMOSFETFETs - Arrays
Shipping Restrictions-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTThrough Hole-
Package / CaseSOIC-8PDIP-8-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage12 V12 V-
Id Continuous Drain Current40 mA40 mA-
Rds On Drain Source Resistance50 Ohms, 50 Ohms75 Ohms-
Vgs th Gate Source Threshold Voltage400 mV--
Vgs Gate Source Voltage10.6 V13.2 V-
Minimum Operating Temperature0 C0 C-
Maximum Operating Temperature+ 70 C+ 70 C-
Pd Power Dissipation500 mW (1/2 W)500 mW (1/2 W)-
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
PackagingTubeTubeTube
ProductMOSFET Small SignalMOSFET Small Signal-
SeriesALD1101AALD1101A-
Transistor Type2 N-Channel2 N-Channel-
TypeMOSFETMOSFET-
BrandAdvanced Linear DevicesAdvanced Linear Devices-
Product TypeMOSFETMOSFET-
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.002998 oz0.032805 oz-
Forward Transconductance Min-0.01 S-
Package Case--8-DIP (0.300", 7.62mm)
Operating Temperature--0°C ~ 70°C (TJ)
Mounting Type--Through Hole
Supplier Device Package--8-PDIP
FET Type--2 N-Channel (Dual) Matched Pair
Power Max--500mW
Drain to Source Voltage Vdss--10.6V
Input Capacitance Ciss Vds---
FET Feature--Standard
Current Continuous Drain Id 25°C---
Rds On Max Id Vgs--75 Ohm @ 5V
Vgs th Max Id--1V @ 10μA
Gate Charge Qg Vgs---
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