APT45GP120J vs APT45GP120JDQ2 vs APT45GP120JDF2

 
PartNumberAPT45GP120JAPT45GP120JDQ2APT45GP120JDF2
DescriptionIGBT Transistors FG, IGBT, 1200V, 45A, SOT-227IGBT Transistors FG, IGBT-COMBI, 1200V, 45A, SOT-227
ManufacturerMicrochipMicrochip-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseSOT-227-4--
Mounting StyleChassis Mount--
ConfigurationN-Channel--
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage3.3 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C34 A--
Pd Power Dissipation329 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTubeTube-
Continuous Collector Current Ic Max75 A--
Height9.6 mm--
Length38.2 mm--
Operating Temperature Range- 55 C to + 150 C--
Width25.4 mm--
BrandMicrochip / MicrosemiMicrochip / Microsemi-
Continuous Collector Current75 A--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity11-
SubcategoryIGBTsIGBTs-
TradenamePOWER MOS 7 IGBT, ISOTOP--
Unit Weight1.058219 oz--
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