 |  | | |
| PartNumber | BCM856BS,115 | BCM856BS | BCM856BS/DG |
| Description | Bipolar Transistors - BJT COMPLEX DISCRETE S2022D/SOT45 | TRANSISTOR,PNP/PNP MATCHED,SOT363, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:-65V, Power Dissipation Pd:300mW, DC Collector Current:-100mA, DC Current Gain hFE:290hFE, No. of P | |
| Manufacturer | Nexperia | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSSOP-6 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | - 65 V | - | - |
| Collector Base Voltage VCBO | 80 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Maximum DC Collector Current | - 200 mA | - | - |
| Gain Bandwidth Product fT | 175 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Height | 1 mm | - | - |
| Length | 2.2 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.35 mm | - | - |
| Brand | Nexperia | - | - |
| Continuous Collector Current | - 100 mA | - | - |
| DC Collector/Base Gain hfe Min | 290 | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.035274 oz | - | - |