BCV72,215 vs BCV72TR vs BCV72

 
PartNumberBCV72,215BCV72TRBCV72
DescriptionBipolar Transistors - BJT TRANS GP TAPE-7TRANS NPN 60V 0.5A SOT-23
ManufacturerNexperia-Fairchild Semiconductor
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Single
RoHSY--
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-23-3--
Transistor PolarityNPN-NPN
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current0.1 A--
Gain Bandwidth Product fT100 MHz--
Minimum Operating Temperature- 65 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
DC Current Gain hFE Max200 at 2 mA, 5 V-450
Height1 mm--
Length3 mm--
PackagingReel-Digi-ReelR Alternate Packaging
Width1.4 mm--
BrandNexperia--
DC Collector/Base Gain hfe Min200 at 2 mA, 5 V--
Pd Power Dissipation250 mW--
Product TypeBJTs - Bipolar Transistors--
QualificationAEC-Q101--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesBCV72 T/R--
Unit Weight0.000282 oz-0.002116 oz
Series---
Package Case--TO-236-3, SC-59, SOT-23-3
Mounting Type--Surface Mount
Supplier Device Package--SOT-23-3
Power Max--350mW
Transistor Type--NPN
Current Collector Ic Max--500mA
Voltage Collector Emitter Breakdown Max--60V
DC Current Gain hFE Min Ic Vce--200 @ 2mA, 5V
Vce Saturation Max Ib Ic--250mV @ 500μA, 10mA
Current Collector Cutoff Max--100nA (ICBO)
Frequency Transition---
Pd Power Dissipation--350 mW
Collector Emitter Voltage VCEO Max--60 V
Collector Emitter Saturation Voltage--0.25 V
Collector Base Voltage VCBO--80 V
Emitter Base Voltage VEBO--5 V
Continuous Collector Current--500 mA
DC Collector Base Gain hfe Min--200
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