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| PartNumber | BFP 720F H6327 | BFP 720F E6327 | BFP720F |
| Description | RF Bipolar Transistors RF BIP TRANSISTOR | RF Bipolar Transistors RF BIP TRANSISTORS | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | RF Bipolar Transistors | RF Bipolar Transistors | - |
| RoHS | Y | Y | - |
| Series | BFP720 | - | - |
| Transistor Type | Bipolar | Bipolar | - |
| Technology | SiGe | SiGe | - |
| Collector Emitter Voltage VCEO Max | 4 V | 4 V | - |
| Emitter Base Voltage VEBO | 1.2 V | 1.2 V | - |
| Continuous Collector Current | 25 mA | 25 mA | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSFP-4-1 | - | - |
| Packaging | Reel | Reel | - |
| Collector Base Voltage VCBO | 13 V | 13 V | - |
| DC Current Gain hFE Max | 400 | 400 | - |
| Height | 0.55 mm | 0.55 mm | - |
| Length | 1.4 mm | 1.4 mm | - |
| Operating Frequency | 45 GHz | 45 GHz | - |
| Type | RF Silicon Germanium | RF Silicon Germanium | - |
| Width | 0.8 mm | 0.8 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Pd Power Dissipation | 100 mW | 100 mW | - |
| Product Type | RF Bipolar Transistors | RF Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | BFP720FH6327XTSA1 BFP72FH6327XT SP000750412 | BFP720FE6327XT | - |