 |  | | |
| PartNumber | BFS 17S H6327 | BFS17S | BFS17S E-6327 |
| Description | RF Bipolar Transistors RF BIP TRANSISTOR | ||
| Manufacturer | Infineon | - | |
| Product Category | RF Bipolar Transistors | RF Transistors (BJT) | - |
| RoHS | Y | - | - |
| Series | BFS17 | - | - |
| Transistor Type | Bipolar Power | - | - |
| Technology | Si | - | - |
| Transistor Polarity | NPN | - | - |
| DC Collector/Base Gain hfe Min | 20 | - | - |
| Collector Emitter Voltage VCEO Max | 15 V | - | - |
| Emitter Base Voltage VEBO | 2.5 V | - | - |
| Continuous Collector Current | 25 mA | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Configuration | Single | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363 | - | - |
| Packaging | Reel | - | - |
| Operating Frequency | 1 GHz | - | - |
| Type | RF Bipolar Power | - | - |
| Brand | Infineon Technologies | - | - |
| Gain Bandwidth Product fT | 1.3 GHz | - | - |
| Pd Power Dissipation | 280 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | BFS17SH6327XT BFS17SH6327XTSA1 SP000750448 | - | - |
| Unit Weight | 0.000212 oz | - | - |