 |  | | |
| PartNumber | BSC007N04LS6ATMA1 | BSC009NE2LS | BSC009NE2LS5 |
| Description | MOSFET | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | Trans MOSFET N-CH 25V 100A 8-Pin TDSON T/R (Alt: BSC009NE2LS5) |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | TDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 25 V | - |
| Id Continuous Drain Current | 100 A | 100 A | - |
| Rds On Drain Source Resistance | 700 uOhms | 1 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.3 V | 1 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 94 nC | 168 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 150 C | - |
| Pd Power Dissipation | 188 W | 96 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 300 S | 85 S | - |
| Fall Time | 13 ns | 19 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 6 ns | 33 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 40 ns | 48 ns | - |
| Typical Turn On Delay Time | 8 ns | 10 ns | - |
| Part # Aliases | SP001629650 | BSC009NE2LSATMA1 BSC9NE2LSXT SP000893362 | - |
| Qualification | - | AEC-Q101 | - |
| Tradename | - | OptiMOS | - |
| Height | - | 1.27 mm | - |
| Length | - | 5.9 mm | - |
| Width | - | 5.15 mm | - |
| Unit Weight | - | 0.004090 oz | - |