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| PartNumber | BSC009NE2LS | BSC009NE2LS5ATMA1 | BSC009NE2LS5 |
| Description | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | MOSFET LV POWER MOS | Trans MOSFET N-CH 25V 100A 8-Pin TDSON T/R (Alt: BSC009NE2LS5) |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | TDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 25 V | 25 V | - |
| Id Continuous Drain Current | 100 A | 100 A | - |
| Rds On Drain Source Resistance | 1 mOhms | 1.25 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1.2 V | - |
| Vgs Gate Source Voltage | 20 V | 16 V | - |
| Qg Gate Charge | 168 nC | 20 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 96 W | 74 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 85 S | 75 S | - |
| Fall Time | 19 ns | 4 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 33 ns | 6 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 48 ns | 30 ns | - |
| Typical Turn On Delay Time | 10 ns | 4 ns | - |
| Part # Aliases | BSC009NE2LSATMA1 BSC9NE2LSXT SP000893362 | BSC009NE2LS5 SP001212764 | - |
| Unit Weight | 0.004090 oz | - | - |
| Series | - | OptiMOS 5 | - |