 | |  | |
| PartNumber | BSC018NE2LS | BSC018NE2LSATMA1 | BSC018NE2LSG |
| Description | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | MOSFET LV POWER MOS | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | TDSON-8 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 25 V | 25 V | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 1.8 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 19 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 69 W | - | - |
| Configuration | Single | - | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 140 S | - | - |
| Fall Time | 3.6 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 4.4 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 26 ns | - | - |
| Typical Turn On Delay Time | 5.5 ns | - | - |
| Part # Aliases | BSC018NE2LSATMA1 BSC18NE2LSXT SP000756336 | BSC018NE2LS BSC18NE2LSXT SP000756336 | - |
| Unit Weight | 0.004176 oz | - | - |