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| PartNumber | BSC059N04LS6ATMA1 | BSC059N04LS G | BSC059N04LS |
| Description | MOSFET | MOSFET N-Ch 40V 73A TDSON-8 OptiMOS 3 | |
| Manufacturer | Infineon | Infineon | INFINEON |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | TDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 59 A | 73 A | - |
| Rds On Drain Source Resistance | 5.9 mOhms | 4.9 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.3 V | 1.2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 9.4 nC | 40 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 150 C | - |
| Pd Power Dissipation | 38 W | 50 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 100 S | 48 S | - |
| Fall Time | 2 ns | 3.8 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 1.2 ns | 3.4 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 8 ns | 23 ns | - |
| Typical Turn On Delay Time | 3 ns | 5.6 ns | - |
| Tradename | - | OptiMOS | - |
| Height | - | 1.27 mm | - |
| Length | - | 5.9 mm | - |
| Series | - | OptiMOS 3 | - |
| Width | - | 5.15 mm | - |
| Part # Aliases | - | BSC059N04LSGATMA1 BSC59N4LSGXT SP000391499 | - |
| Unit Weight | - | 0.003527 oz | - |