BSC080N03LSGATMA1 vs BSC080N03LS vs BSC080N03LS G

 
PartNumberBSC080N03LSGATMA1BSC080N03LSBSC080N03LS G
DescriptionMOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3Trans MOSFET N-CH 30V 14A 8-Pin TDSON T/R (Alt: BSC080N03LS G)
ManufacturerInfineonINFINEONINFINEON
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTDSON-8--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current53 A--
Rds On Drain Source Resistance6.7 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge21 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation35 W--
ConfigurationSingle-Single Quad Drain Triple Source
Channel ModeEnhancement-Enhancement
TradenameOptiMOS-OptiMOS
PackagingReel-Reel
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3-OptiMOS 3
Transistor Type1 N-Channel-1 N-Channel
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min30 S--
Fall Time2.6 ns-2.6 ns
Product TypeMOSFET--
Rise Time2.8 ns-2.8 ns
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns-15 ns
Typical Turn On Delay Time3.3 ns-3.3 ns
Part # AliasesBSC080N03LS BSC8N3LSGXT G SP000275114--
Unit Weight0.003915 oz--
Part Aliases--BSC080N03LSGATMA1 BSC080N03LSGXT SP000275114
Package Case--TDSON-8
Pd Power Dissipation--2.5 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--14 A
Vds Drain Source Breakdown Voltage--30 V
Rds On Drain Source Resistance--8 mOhms
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