BSP716NH6327XTSA1 vs BSP716N vs BSP716N H6327

 
PartNumberBSP716NH6327XTSA1BSP716NBSP716N H6327
DescriptionMOSFET SMALL SIGNAL+N-CH
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelP-Channel-
Vds Drain Source Breakdown Voltage75 V--
Id Continuous Drain Current2.3 A--
Rds On Drain Source Resistance160 mOhms--
Vgs th Gate Source Threshold Voltage800 mV--
Vgs Gate Source Voltage10 V--
Qg Gate Charge8.7 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.8 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1.6 mm--
Length6.5 mm--
Transistor Type1 P-Channel1 P-Channel-
Width3.5 mm--
BrandInfineon Technologies--
Forward Transconductance Min5.71 S--
Fall Time16.7 ns16.7 ns-
Product TypeMOSFET--
Rise Time5.5 ns5.5 ns-
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time50.1 ns50.1 ns-
Typical Turn On Delay Time4.6 ns4.6 ns-
Part # AliasesBSP716N H6327 SP001087514--
Unit Weight0.003951 oz--
Part Aliases-BSP716N H6327 SP001087514-
Package Case-SOT-223-4-
Pd Power Dissipation-1.8 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-2.3 A-
Vds Drain Source Breakdown Voltage-75 V-
Vgs th Gate Source Threshold Voltage-800 mV-
Rds On Drain Source Resistance-160 mOhms-
Qg Gate Charge-8.7 nC-
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