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| PartNumber | CSD23202W10 | CSD23202W10T | CSD23201W10 |
| Description | MOSFET 12V P-channel NexFET Pwr MOSFET | MOSFET 12V PCH NexFET | MOSFET P-Ch NexFET Power MOSFETs |
| Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | DSBGA-4 | DSBGA-4 | DSBGA-4 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 12 V | 12 V | 12 V |
| Id Continuous Drain Current | 2.2 A | 2.2 A | 2.2 A |
| Rds On Drain Source Resistance | 92 mOhms | 92 mOhms | 82 mOhms |
| Vgs th Gate Source Threshold Voltage | 900 mV | 600 mV | - |
| Vgs Gate Source Voltage | 6 V | 6 V | 6 V |
| Qg Gate Charge | 3.8 nC | 2.9 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1 W | 1 W | 1000 mW |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | NexFET | NexFET | NexFET |
| Packaging | Reel | Reel | Reel |
| Height | 0.62 mm | 0.62 mm | 0.62 mm |
| Length | 1 mm | 1 mm | 1 mm |
| Series | CSD23202W10 | CSD23202W10 | CSD23201W10 |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Width | 1 mm | 1 mm | 1 mm |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments |
| Forward Transconductance Min | 5.6 S | - | - |
| Fall Time | 21 ns | 21 ns | 29 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 4 ns | 4 ns | 19 ns |
| Factory Pack Quantity | 3000 | 250 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 58 ns | 58 ns | 68 ns |
| Typical Turn On Delay Time | 9 ns | 9 ns | 24 ns |
| Unit Weight | 0.007055 oz | 0.000032 oz | - |