DMC205010R vs DMC2053UVT-13 vs DMC2050USD

 
PartNumberDMC205010RDMC2053UVT-13DMC2050USD
DescriptionBipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mmMOSFET MOSFET BVDSS: 8V-24V
ManufacturerPanasonicDiodes Incorporated-
Product CategoryBipolar Transistors - BJTMOSFET-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-6TSOT-26-6-
Transistor PolarityNPNN-Channel, P-Channel-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO7 V--
Collector Emitter Saturation Voltage130 mV--
Maximum DC Collector Current200 mA--
Gain Bandwidth Product fT150 MHz--
Maximum Operating Temperature+ 85 C+ 150 C-
PackagingReelReel-
BrandPanasonicDiodes Incorporated-
Continuous Collector Current100 mA--
DC Collector/Base Gain hfe Min210--
Product TypeBJTs - Bipolar TransistorsMOSFET-
Factory Pack Quantity300010000-
SubcategoryTransistorsMOSFETs-
Technology-Si-
Number of Channels-2 Channel-
Vds Drain Source Breakdown Voltage-20 V-
Id Continuous Drain Current-4.6 A, 3.2 A-
Rds On Drain Source Resistance-35 mOhms, 74 mOhms-
Vgs th Gate Source Threshold Voltage-400 mV, 1 V-
Vgs Gate Source Voltage-12 V-
Qg Gate Charge-3.6 nC, 5.9 nC-
Minimum Operating Temperature-- 55 C-
Pd Power Dissipation-1.1 W-
Channel Mode-Enhancement-
Transistor Type-1 N-Channel, 1 P-Channel-
Fall Time-3.6 ns, 18 ns-
Rise Time-3 ns, 7.8 ns-
Typical Turn Off Delay Time-12.5 ns, 31 ns-
Typical Turn On Delay Time-2.6 ns, 3.2 ns-
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