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| PartNumber | DMN10H220L-7 | DMN10H220L-13 | DMN10H220L-13-CUT TAPE |
| Description | MOSFET 100V N-Ch Enh FET 16Vgs 1.6A 1.3W | MOSFET 100V N-Ch Enh FET 16Vgs 1.6A 1.3W | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 1.6 A | 1.6 A | - |
| Rds On Drain Source Resistance | 220 mOhms | 220 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
| Vgs Gate Source Voltage | 10 V | 16 V | - |
| Qg Gate Charge | 8.3 nC | 8.3 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.3 W | 1.3 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Series | DMN10 | DMN10 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 3.6 ns | 3.6 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 8.2 ns | 8.2 ns | - |
| Factory Pack Quantity | 3000 | 10000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 7.9 ns | 7.9 ns | - |
| Typical Turn On Delay Time | 6.8 ns | 6.8 ns | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | - |