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| PartNumber | DMN63D8LDW-13 | DMN63D8L-7 | DMN63D8LDW |
| Description | MOSFET 30V DUAL N-CH MOSFET | MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-363-6 | SOT-23-3 | - |
| Number of Channels | 2 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Configuration | Dual | Single | - |
| Packaging | Reel | Reel | - |
| Series | DMN63 | DMN63D8L | - |
| Transistor Type | 2 N-Channel | 1 N-Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 10000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.000265 oz | 0.000282 oz | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Id Continuous Drain Current | - | 350 mA | - |
| Rds On Drain Source Resistance | - | 2.8 Ohms | - |
| Vgs th Gate Source Threshold Voltage | - | 800 mV | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Qg Gate Charge | - | 0.9 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 520 mW | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 0.975 mm | - |
| Length | - | 2.9 mm | - |
| Width | - | 1.3 mm | - |
| Forward Transconductance Min | - | 80 mS | - |
| Fall Time | - | 16.7 ns | - |
| Rise Time | - | 3.9 ns | - |
| Typical Turn Off Delay Time | - | 11.4 ns | - |
| Typical Turn On Delay Time | - | 2.3 ns | - |